Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
出版年份 2013 全文链接
标题
Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
作者
关键词
-
出版物
Scientific Reports
Volume 3, Issue 1, Pages -
出版商
Springer Nature
发表日期
2013-03-15
DOI
10.1038/srep01459
参考文献
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- (2012) Seung-Eon Ahn et al. ADVANCED MATERIALS
- Gated three-terminal device architecture to eliminate persistent photoconductivity in oxide semiconductor photosensor arrays
- (2012) Sanghun Jeon et al. NATURE MATERIALS
- Microscopic Origin of Universal Quasilinear Band Structures of Transparent Conducting Oxides
- (2012) Youngho Kang et al. PHYSICAL REVIEW LETTERS
- The Influence of In/Zn Ratio on the Performance and Negative-Bias Instability of Hf–In–Zn–O Thin-Film Transistors Under Illumination
- (2011) Hyun-Suk Kim et al. IEEE ELECTRON DEVICE LETTERS
- Investigation of Light-Induced Bias Instability in Hf-In-Zn-O Thin Film Transistors: A Cation Combinatorial Approach
- (2011) Jang-Yeon Kwon et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
- (2011) Joon Seok Park et al. THIN SOLID FILMS
- Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors
- (2010) Md Delwar Hossain Chowdhury et al. APPLIED PHYSICS LETTERS
- Persistent photoconductivity in Hf–In–Zn–O thin film transistors
- (2010) Khashayar Ghaffarzadeh et al. APPLIED PHYSICS LETTERS
- Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress
- (2010) Khashayar Ghaffarzadeh et al. APPLIED PHYSICS LETTERS
- Hybrid functional study on structural and electronic properties of oxides
- (2010) Sohee Park et al. CURRENT APPLIED PHYSICS
- Structural and electrical characteristics of high quality (100) orientated-Zn3N2 thin films grown by radio-frequency magnetron sputtering
- (2010) G. Z. Xing et al. JOURNAL OF APPLIED PHYSICS
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- (2010) Toshio Kamiya et al. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS
- High mobility amorphous zinc oxynitride semiconductor material for thin film transistors
- (2009) Yan Ye et al. JOURNAL OF APPLIED PHYSICS
- Intrinsicn-Type Behavior in Transparent Conducting Oxides: A Comparative Hybrid-Functional Study ofIn2O3,SnO2, and ZnO
- (2009) Péter Ágoston et al. PHYSICAL REVIEW LETTERS
- Atomic geometry and electronic structure of defects in Zn3N2
- (2007) Run Long et al. THIN SOLID FILMS
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