Thermoelectric transport coefficients in mono-layer MoS2 and WSe2: Role of substrate, interface phonons, plasmon, and dynamic screening

Thermoelectric Response of Bulk and Monolayer MoSe2 and WSe2

(2015) S. Kumar et al.   CHEMISTRY OF MATERIALS

Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

(2015) Krishnendu Ghosh et al.   JOURNAL OF APPLIED PHYSICS

Thermoelectric effects in graphene nanostructures

(2015) Philippe Dollfus et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Electron and Hole Mobilities in Single-Layer WSe2

(2014) Adrien Allain et al.   ACS Nano

Electronic and thermoelectric properties of few-layer transition metal dichalcogenides

(2014) Darshana Wickramaratne et al.   JOURNAL OF CHEMICAL PHYSICS

Large Area Growth and Electrical Properties of p-Type WSe2 Atomic Layers

(2014) Hailong Zhou et al.   NANO LETTERS

Theoretical study of thermoelectric properties of few-layer MoS2 and WSe2

(2014) Wen Huang et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Enhanced thermoelectric performance of phosphorene by strain-induced band convergence

(2014) H. Y. Lv et al.   PHYSICAL REVIEW B

Intrinsic transport properties of electrons and holes in monolayer transition-metal dichalcogenides

(2014) Zhenghe Jin et al.   PHYSICAL REVIEW B

Giant Seebeck coefficient of the graphene/h-BN superlattices

(2013) Yushi Yokomizo et al.   APPLIED PHYSICS LETTERS

Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition

(2013) Matin Amani et al.   APPLIED PHYSICS LETTERS

Surface polar optical phonon scattering of carriers in graphene on various substrates

(2013) I-Tan Lin et al.   APPLIED PHYSICS LETTERS

Thermoelectric performance of MX2 (M = Mo,W; X = S,Se) monolayers

(2013) Wen Huang et al.   JOURNAL OF APPLIED PHYSICS

Large and Tunable Photothermoelectric Effect in Single-Layer MoS2

(2013) Michele Buscema et al.   NANO LETTERS

Theory of remote phonon scattering in top-gated single-layer graphene

(2013) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Anomalous Raman spectra and thickness-dependent electronic properties of WSe2

(2013) H. Sahin et al.   PHYSICAL REVIEW B

Mobility enhancement and temperature dependence in top-gated single-layer MoS2

(2013) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

(2012) Qing Hua Wang et al.   Nature Nanotechnology

Tunable dielectric response of transition metals dichalcogenides MX2 (M=Mo, W; X=S, Se, Te): Effect of quantum confinement

(2012) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

Phonon-limited mobility inn-type single-layer MoS2from first principles

(2012) Kristen Kaasbjerg et al.   PHYSICAL REVIEW B

Theory of interfacial plasmon-phonon scattering in supported graphene

(2012) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Nature of Electronic States in Atomically Thin MoS2 Field-Effect Transistors

(2011) Subhamoy Ghatak et al.   ACS Nano

High temperature thermoelectric properties of optimized InGaN

(2011) Alexander Sztein et al.   JOURNAL OF APPLIED PHYSICS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Large Seebeck coefficients and thermoelectric power factor of La-doped SrTiO3 thin films

(2010) Bharat Jalan et al.   APPLIED PHYSICS LETTERS

MD simulations of molybdenum disulphide (MoS2): Force-field parameterization and thermal transport behavior

(2010) Vikas Varshney et al.   COMPUTATIONAL MATERIALS SCIENCE

Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials

(2010) Ashok T. Ramu et al.   JOURNAL OF APPLIED PHYSICS

Thermoelectric figure of merit of(In0.53Ga0.47As)0.8(In0.52Al0.48As)0.2III-V semiconductor alloys

(2010) Je-Hyeong Bahk et al.   PHYSICAL REVIEW B

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

Investigation of blistering kinetics in hydrogen implanted aluminium nitride

(2008) R Singh et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY