A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices

Manipulation of nanoscale V-pits to optimize internal quantum efficiency of InGaN multiple quantum wells

(2015) Chiao-Yun Chang et al.   APPLIED PHYSICS LETTERS

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

(2014) Chao Liu et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes

(2014)   JOURNAL OF APPLIED PHYSICS

Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

(2014)   JOURNAL OF APPLIED PHYSICS

GaN-Based Light-Emitting Diodes With Staircase Electron Injector Structure

(2014) Shoou-Jinn Chang et al.   Journal of Display Technology

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

(2014) Zi-Hui Zhang et al.   OPTICS EXPRESS

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

(2014) Jaekyun Kim et al.   OPTICS EXPRESS

Laser beam induced current microscopy and photocurrent mapping for junction characterization of infrared photodetectors

(2014) WeiCheng Qiu et al.   Science China-Physics Mechanics & Astronomy

On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes

(2013) Z. M. Simon Li   APPLIED PHYSICS LETTERS

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

(2013) Jaekyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Optimization of InGaN/GaN superlattice structures for high-efficiency vertical blue light-emitting diodes

(2013) Han-Youl Ryu et al.   JOURNAL OF APPLIED PHYSICS

The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well light emitting diodes

(2013) Xiaoming Wu et al.   JOURNAL OF APPLIED PHYSICS

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

(2012) L. C. Le et al.   APPLIED PHYSICS LETTERS

Impact of active layer design on InGaN radiative recombination coefficient and LED performance

(2012) X. Li et al.   JOURNAL OF APPLIED PHYSICS

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

(2011) Qi Dai et al.   APPLIED PHYSICS LETTERS

Stability of Al/Ti/Au contacts to N-polar n-GaN of GaN based vertical light emitting diode on silicon substrate

(2011) Junlin Liu et al.   APPLIED PHYSICS LETTERS

Influence of indium composition in the prestrained InGaN interlayer on the strain relaxation of InGaN/GaN multiple quantum wells in laser diode structures

(2011) Lei Liu et al.   JOURNAL OF APPLIED PHYSICS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Improved Performance of GaN-Based Blue LEDs With the InGaN Insertion Layer Between the MQW Active Layer and the n-GaN Cladding Layer

(2010) Chung-Hsun Jang et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Enhanced efficiency and reduced spectral shift of green light-emitting-diode epitaxial structure with prestrained growth

(2008) Chi-Feng Huang et al.   JOURNAL OF APPLIED PHYSICS