Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes

(2013) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

(2013) Jaekyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

(2013) Justin Iveland et al.   PHYSICAL REVIEW LETTERS

Experimental determination of current spill-over and its effect on the efficiency droop in InGaN/GaN blue-light-emitting-diodes

(2012) Byung-Jun Ahn et al.   APPLIED PHYSICS LETTERS

Lateral charge carrier diffusion in InGaN quantum wells

(2012) J. Danhof et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

On the symmetry of efficiency-versus-carrier-concentration curves in GaInN/GaN light-emitting diodes and relation to droop-causing mechanisms

(2011) Qi Dai et al.   APPLIED PHYSICS LETTERS

High resolution cathodoluminescence hyperspectral imaging of surface features in InGaN/GaN multiple quantum well structures

(2011) Jochen Bruckbauer et al.   APPLIED PHYSICS LETTERS

Efficiency droop in InGaN/GaN multiple-quantum-well blue light-emitting diodes grown on free-standing GaN substrate

(2011) Zhiqiang Liu et al.   APPLIED PHYSICS LETTERS

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation

(2011) Kayo Koike et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Influence of carrier screening and band filling effects on efficiency droop of InGaN light emitting diodes

(2011) Lei Wang et al.   OPTICS EXPRESS

Time-of-flight measurements of charge carrier diffusion in InxGa1−xN/GaN quantum wells

(2011) J. Danhof et al.   PHYSICAL REVIEW B

Low efficiency droop in blue-green m-plane InGaN/GaN light emitting diodes

(2010) Shih-Chun Ling et al.   APPLIED PHYSICS LETTERS

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

(2010) J. Hader et al.   APPLIED PHYSICS LETTERS

Effect of indium surfactant on stress relaxation by V-defect formation in GaN epilayers grown by metalorganic chemical vapor deposition

(2010) Dongjin Won et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Carrier capture by threading dislocations in (In,Ga)N/GaN heteroepitaxial layers

(2010) U. Jahn et al.   PHYSICAL REVIEW B

LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

(2009) M.H. Crawford   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

High-Power and High-Efficiency InGaN-Based Light Emitters

(2009) Ansgar Laubsch et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Significant increase of light emission efficiency by in situ site-selective etching of InGaN quantum wells

(2009) Zhilai Fang   JOURNAL OF APPLIED PHYSICS

Dislocation screening and strongly increased internal quantum efficiency in heteroepitaxialGaN/AlxGa1−xNultraviolet-emitting quantum wells

(2009) D. Fuhrmann et al.   PHYSICAL REVIEW B

Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys

(2009) I. Gorczyca et al.   PHYSICAL REVIEW B

Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes

(2008) J.-H. Ryou et al.   APPLIED PHYSICS LETTERS

The role of dislocations as nonradiative recombination centers in InGaN quantum wells

(2008) Josh Abell et al.   APPLIED PHYSICS LETTERS

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS

On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

(2008) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra

(2008) A. Kaneta et al.   PHYSICAL REVIEW B