Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes

Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes

(2014) Xiaoming Wu et al.   APPLIED PHYSICS LETTERS

Study of InGaN/GaN Light Emitting Diodes With Step-Graded Electron Blocking Layer

(2014) Chao Liu et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

On the mechanisms of InGaN electron cooler in InGaN/GaN light-emitting diodes

(2014) Zi-Hui Zhang et al.   OPTICS EXPRESS

Influence of V-pits on the efficiency droop in InGaN/GaN quantum wells

(2014) Jaekyun Kim et al.   OPTICS EXPRESS

Repulsive interactions between dislocations and overgrown v-shaped defects in epitaxial GaN layers

(2013) P. H. Weidlich et al.   APPLIED PHYSICS LETTERS

Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well

(2013) Yong-Hee Cho et al.   APPLIED PHYSICS LETTERS

On the importance of AlGaN electron blocking layer design for GaN-based light-emitting diodes

(2013) Z. M. Simon Li   APPLIED PHYSICS LETTERS

Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes

(2013) Sang-Heon Han et al.   APPLIED PHYSICS LETTERS

Effect of V-Shaped Pit Size on the Reverse Leakage Current of InGaN/GaN Light-Emitting Diodes

(2013) Jaekyun Kim et al.   IEEE ELECTRON DEVICE LETTERS

Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness

(2013) L. C. Le et al.   JOURNAL OF APPLIED PHYSICS

Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

(2013) Giovanni Verzellesi et al.   JOURNAL OF APPLIED PHYSICS

Mg Doping Affects Dislocation Core Structures in GaN

(2013) S. K. Rhode et al.   PHYSICAL REVIEW LETTERS

Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes

(2012) L. C. Le et al.   APPLIED PHYSICS LETTERS

Atomic scale characterization of GaInN/GaN multiple quantum wells in V-shaped pits

(2011) Shigetaka Tomiya et al.   APPLIED PHYSICS LETTERS

On the temperature dependence of electron leakage from the active region of GaInN/GaN light-emitting diodes

(2011) David S. Meyaard et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

Mg doping and its effect on the semipolar GaN(112¯2) growth kinetics

(2009) L. Lahourcade et al.   APPLIED PHYSICS LETTERS

Significant increase of light emission efficiency by in situ site-selective etching of InGaN quantum wells

(2009) Zhilai Fang   JOURNAL OF APPLIED PHYSICS

The role of dislocations as nonradiative recombination centers in InGaN quantum wells

(2008) Josh Abell et al.   APPLIED PHYSICS LETTERS