Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films
出版年份 2018 全文链接
标题
Frequency domain analysis of pyroelectric response in silicon-doped hafnium oxide (HfO2) thin films
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 113, Issue 12, Pages 122901
出版商
AIP Publishing
发表日期
2018-09-18
DOI
10.1063/1.5046844
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Pyroelectricity of silicon-doped hafnium oxide thin films
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- Thin HfxZr1-xO2Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
- (2014) Min Hyuk Park et al. Advanced Energy Materials
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- Nanosecond Polarization Switching and Long Retention in a Novel MFIS-FET Based on Ferroelectric $\hbox{HfO}_{2}$
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