Performance limits of tunnel transistors based on mono-layer transition-metal dichalcogenides

Enhancement of band-to-band tunneling in mono-layer transition metal dichalcogenides two-dimensional materials by vacancy defects

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Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M = Mo, W; X = S, Se, Te) metal-oxide-semiconductor field effect transistors

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Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

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Tunable Electronic Properties of Two-Dimensional Transition Metal Dichalcogenide Alloys: A First-Principles Prediction

(2013) Jinyang Xi et al.   Journal of Physical Chemistry Letters

Tunneling Transistors Based on Graphene and 2-D Crystals

(2013) Debdeep Jena   PROCEEDINGS OF THE IEEE

A Simple Approach to Quantum Confinement in Tunneling Field-Effect Transistors

(2012) J. L. Padilla et al.   IEEE ELECTRON DEVICE LETTERS

High-Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts

(2012) Hui Fang et al.   NANO LETTERS

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

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Complementary Germanium Electron–Hole Bilayer Tunnel FET for Sub-0.5-V Operation

(2011) Livio Lattanzio et al.   IEEE ELECTRON DEVICE LETTERS

Insights Into the Design and Optimization of Tunnel-FET Devices and Circuits

(2011) Ashish Pal et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Drain-Dependence of Tunnel Field-Effect Transistor Characteristics: The Role of the Channel

(2011) Abhijit Mallik et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Tunnel field-effect transistors as energy-efficient electronic switches

(2011) Adrian M. Ionescu et al.   NATURE

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Modeling of High-Performance p-Type III–V Heterojunction Tunnel FETs

(2010) J. Knoch et al.   IEEE ELECTRON DEVICE LETTERS

Tunneling phenomena in carbon nanotube field-effect transistors

(2008) Joachim Knoch et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE