Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

(2013) S. Balatti et al.   ADVANCED MATERIALS

Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy

(2013) T. L. Duan et al.   APPLIED PHYSICS LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Oxide Heterostructure Resistive Memory

(2013) Yuchao Yang et al.   NANO LETTERS

Complementary resistive switching in tantalum oxide-based resistive memory devices

(2012) Yuchao Yang et al.   APPLIED PHYSICS LETTERS

Complementary Switching in Oxide-Based Bipolar Resistive-Switching Random Memory

(2012) Federico Nardi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

A Family of Electronically Reconfigurable Nanodevices

(2009) J. Joshua Yang et al.   ADVANCED MATERIALS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

TiN electrode-induced bipolar resistive switching of TiO2 thin films

(2009) Young Ho Do et al.   CURRENT APPLIED PHYSICS