Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory

标题
Dependence of reactive metal layer on resistive switching in a bi-layer structure Ta/HfOx filament type resistive random access memory
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 8, Pages 083507
出版商
AIP Publishing
发表日期
2014-02-25
DOI
10.1063/1.4866671

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