Band alignment and interfacial structure of ZnO/Si heterojunction with Al2O3 and HfO2 as interlayers

Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC

(2013) Feng Zhang et al.   JOURNAL OF APPLIED PHYSICS

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

(2013) M. K. Hudait et al.   JOURNAL OF APPLIED PHYSICS

Band alignment and interfacial structure of ZnO/Ge heterojunction investigated by photoelectron spectroscopy

(2012) S. D. Singh et al.   APPLIED PHYSICS LETTERS

Enhanced light emission of double heterostructured MgZnO/ZnO/MgZnO in ultraviolet blind light-emitting diodes deposited by vapor cooling condensation system

(2012) Po-Ching Wu et al.   APPLIED PHYSICS LETTERS

Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond

(2012) J. W. Liu et al.   APPLIED PHYSICS LETTERS

High sensitivity and fast response and recovery times in a ZnO nanorod array/p-Si self-powered ultraviolet detector

(2012) J. J. Hassan et al.   APPLIED PHYSICS LETTERS

Band alignment of HfO2 on SiO2/Si structure

(2012) Xiaolei Wang et al.   APPLIED PHYSICS LETTERS

Graphene/ZnO nanowire/graphene vertical structure based fast-response ultraviolet photodetector

(2012) Xue-Wen Fu et al.   APPLIED PHYSICS LETTERS

Energy band alignment of InGaZnO4/Si heterojunction determined by x-ray photoelectron spectroscopy

(2012) Zhang-Yi Xie et al.   APPLIED PHYSICS LETTERS

Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride

(2012) Jialing Yang et al.   JOURNAL OF APPLIED PHYSICS

Transitivity of band offsets between semiconductor heterojunctions and oxide insulators

(2011) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

High-Purity Ultraviolet Electroluminescence fromn-ZnO Nanowires/p+-Si Heterostructure LEDs withi-MgO Film as Carrier Control Layer

(2011) Byung Oh Jung et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Valence-band offset of p-NiO/n-ZnO heterojunction measured by X-ray photoelectron spectroscopy

(2011) Zhi-Guo Yang et al.   PHYSICS LETTERS A

Valence band offset of ZnO/BaTiO3 heterojunction measured by X-ray photoelectron spectroscopy

(2010) C. H. Jia et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Electroluminescence behavior of ZnO/Si heterojunctions: Energy band alignment and interfacial microstructure

(2010) J. B. You et al.   JOURNAL OF APPLIED PHYSICS

Band offsets of HfO2/ZnO interface: In situ x-ray photoelectron spectroscopy measurement and ab initio calculation

(2009) Q. Chen et al.   APPLIED PHYSICS LETTERS

The electronic properties of the interface structure between ZnO and amorphous HfO2

(2009) Byungki Ryu et al.   PHYSICA B-CONDENSED MATTER

Valence band offset of ZnO∕GaAs heterojunction measured by x-ray photoelectron spectroscopy

(2008) P. F. Zhang et al.   APPLIED PHYSICS LETTERS

Ultraviolet and visible electroluminescence from n-ZnO∕SiOx∕(n,p)-Si heterostructured light-emitting diodes

(2008) S. T. Tan et al.   APPLIED PHYSICS LETTERS

NiO∕ZnO light emitting diodes by solution-based growth

(2008) Y. Y. Xi et al.   APPLIED PHYSICS LETTERS

Energy band alignment at TiO2∕Si interface with various interlayers

(2008) M. Perego et al.   JOURNAL OF APPLIED PHYSICS