期刊
PHYSICS LETTERS A
卷 375, 期 16, 页码 1760-1763出版社
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physleta.2011.03.021
关键词
Valence-band offset; X-ray photoelectron spectroscopy; NiO/ZnO heterojunction
资金
- National Natural Science Foundation of China [51072181, 50772099]
- Ministry of Education of China [707035]
- Ministry of Education [20090101110044]
X-ray photoelectron spectroscopy was used to measure the valence-band offset (VBO) of the NiO/ZnO heterojunction grown on quartz substrate by radio frequency (RF) magnetron sputtering. Core levels of Ni 2p and Zn 2p were used to align the VBO of p-NiO/n-ZnO heterojunction. The valence-band offset (Delta Ev) is determined to be 1.47 eV. According to the band gap of 3.7 eV for NiO and 3.37 eV for ZnO, the conduction-band offset (Delta E-C) in the structure was calculated to be 1.8 eV, and it has a type-II band alignment. (C) 2011 Elsevier B.V. All rights reserved.
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