期刊
PHYSICA B-CONDENSED MATTER
卷 404, 期 23-24, 页码 4823-4826出版社
ELSEVIER
DOI: 10.1016/j.physb.2009.08.184
关键词
Interface; ZnO; HfO2; O-vacancy; First-principles calculations
We investigate the atomic structure of the interface between crystalline ZnO and amorphous HfO2 (a-HfO2) and the electronic properties of oxygen vacancy (V-O) near the interface through first-principles density-functional calculations. From the band alignment of ZnO/a-HfO2 interfaces, the conduction band offset is estimated to be 2.14-2.39 eV, while the potential barrier for hole conduction is nearly zero. The defect level of V-O is higher in gate oxide than in ZnO. As V-O behaves as a charge trap center in gate oxide, this defect can cause threshold voltage instability, while it does not in the ZnO region. (C) 2009 Elsevier B.V. All rights reserved.
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