Low-temperature solution-processed alumina as gate dielectric for reducing the operating-voltage of organic field-effect transistors
出版年份 2013 全文链接
标题
Low-temperature solution-processed alumina as gate dielectric for reducing the operating-voltage of organic field-effect transistors
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 103, Issue 6, Pages 061603
出版商
AIP Publishing
发表日期
2013-08-11
DOI
10.1063/1.4818343
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics
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- Fabrication of Sol–Gel Alumina Dielectric for Low-Voltage Operating Pentacene Transistor
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- High mobility and low operating voltage ZnGaO and ZnGaLiO transistors with spin-coated Al2O3as gate dielectric
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- Improving the Gate Stability of ZnO Thin-Film Transistors with Aluminum Oxide Dielectric Layers
- (2008) Min Suk Oh et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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