High quality interfaces of InAs-on-insulator field-effect transistors with ZrO2 gate dielectrics

Ultrathin-Body High-Mobility InAsSb-on-Insulator Field-Effect Transistors

(2012) Hui Fang et al.   IEEE ELECTRON DEVICE LETTERS

III–V Complementary Metal–Oxide–Semiconductor Electronics on Silicon Substrates

(2012) Junghyo Nah et al.   NANO LETTERS

Nanoscale InGaSb Heterostructure Membranes on Si Substrates for High Hole Mobility Transistors

(2012) Kuniharu Takei et al.   NANO LETTERS

Al-doped HfO2/In0.53Ga0.47As metal-oxide-semiconductor capacitors

(2011) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness

(2011) Kuniharu Takei et al.   APPLIED PHYSICS LETTERS

Physical and Electrical Analysis of Post-$ \hbox{HfO}_{2}$ Fluorine Plasma Treatment for the Improvement of $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs' Performance

(2011) Yen-Ting Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

(2011) É. O’Connor et al.   JOURNAL OF APPLIED PHYSICS

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Quantum Confinement Effects in Nanoscale-Thickness InAs Membranes

(2011) Kuniharu Takei et al.   NANO LETTERS

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

(2011) M. P. J. Punkkinen et al.   PHYSICAL REVIEW B

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

(2010) Masafumi Yokoyama et al.   APPLIED PHYSICS LETTERS

Scalability of Sub-100 nm InAs HEMTs on InP Substrate for Future Logic Applications

(2010) Dae-Hyun Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

(2010) Hyunhyub Ko et al.   NATURE