Phonon and electron transport through Ge2Sb2Te5 films and interfaces bounded by metals
出版年份 2013 全文链接
标题
Phonon and electron transport through Ge2Sb2Te5 films and interfaces bounded by metals
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 19, Pages 191911
出版商
AIP Publishing
发表日期
2013-05-17
DOI
10.1063/1.4807141
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Phase and thickness dependent modulus of Ge2Sb2Te5 films down to 25 nm thickness
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