期刊
JOURNAL OF APPLIED PHYSICS
卷 107, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.3284084
关键词
amorphous state; antimony compounds; crystal structure; crystallisation; germanium compounds; interface phenomena; phase change materials; silicon compounds; solid-state phase transformations; thermal conductivity; thermal resistance
资金
- European Community
- CHEMAPH project
- Intra European Fellowship TCAMMD project
The thermal conductivity of Ge2Sb2Te5 (GST) layers, as well as the thermal boundary resistance at the interface between the GST and amorphous SiO2, was measured using a photothermal radiometry experiment. The two phase changes in the Ge2Sb2Te5 were retrieved, starting from the amorphous and sweeping to the face centered cubic (fcc) crystalline state at 130 degrees C and then to the hexagonal crystalline phase (hcp) at 310 degrees C. The thermal conductivity resulted to be constant in the amorphous phase, whereas it evolved between the two crystalline states. The thermal boundary resistance at the GST-SiO2 interface was estimated to be higher for the hcp phase than for the amorphous and fcc ones.
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