Mechanisms controlling the phase and dislocation density in epitaxial silicon films grown from silane below 800 °C

出版年份 2010 全文链接

标题

作者

关键词

出版物

Volume 96, Issue 20, Pages 201901

出版商

AIP Publishing

发表日期

2010-05-19

DOI

10.1063/1.3422474

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