Structural and electrical properties of epitaxial Si layers prepared by E-beam evaporation

in this work, we present structural and electrical properties of thin Si films which are homoepitaxially grown at low substrate temperatures (T-s=450-700 degrees C) by high-rate electron beam evaporation. As substrates, monocrystalline Si wafers with (100) and (111) orientations and polycrystalline Si (poly-Si) seed layers on glass were used. Applying Secco etching, films grown on Si(I 11) wafers exhibit a decreasing etch pit density with increasing T,,. The best structural quality of the films was obtained on Si(100) wafers. Defect etching on epitaxially grown poly-Si absorbers reveal regions with different crystalline quality. Solar cells have been prepared on both wafers and seed layers. Applying Rapid Thermal Annealing (RTA) and Hydrogen plasma passivation an open circuit voltage of 570 mV for wafer based and 346 mV for seed layer based solar cells have been reached. (c) 2007 Elsevier B.V. All rights reserved.