Doping of high-quality epitaxial silicon grown by hot-wire chemical vapor deposition near 700 °C

出版年份 2009 全文链接

标题

作者

关键词

出版物

THIN SOLID FILMS

Volume 517, Issue 12, Pages 3496-3498

出版商

Elsevier BV

发表日期

2009-01-27

DOI

10.1016/j.tsf.2009.01.059

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THIN SOLID FILMS

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Protocol

Reagent

Reprint

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