Device Characteristics of Amorphous Indium Gallium Zinc Oxide TFTs Sputter Deposited with Different Substrate Biases

标题
Device Characteristics of Amorphous Indium Gallium Zinc Oxide TFTs Sputter Deposited with Different Substrate Biases
作者
关键词
-
出版物
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 7, Pages H278
出版商
The Electrochemical Society
发表日期
2009-05-19
DOI
10.1149/1.3129505

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