Microwave ZnO thin-film transistors

We have developed ZnO thin-film transistor design and fabrication techniques to demonstrate microwave frequency operation with 2-mu m gate length devices produced on GaAs sub strates. Using SiO2 gate insulator and pulsed laser deposited ZnO active layers, a drain-current ON/OFF ratio of 10(12), a drain-current density of 400 mA/mm, a field-effect mobility of 110 cm(2)/V center dot s, and a subthreshold gate voltage swing of 109 mV/dec were achieved. Devices with Ti-gate metal had current and power gain cutoff frequencies of 500 and 400 MHz, respectively.