Spin Injection, Transport, and Detection at Room Temperature in a Lateral Spin Transport Device with Co2FeAl0.5Si0.5/n-GaAs Schottky Tunnel Junctions

Four-terminal nonlocal signals in lateral spin transport devices with variously ordered Co2FeAl0.5Si0.5 full-Heusler alloy electrodes

(2013) Tatsuya Saito et al.   APPLIED PHYSICS LETTERS

All-electrical spin injection and detection in the Co2FeSi/GaAs hybrid system in the local and non-local configuration

(2013) P. Bruski et al.   APPLIED PHYSICS LETTERS

Non-Local and Local Spin Signals in a Lateral Spin Transport Device With ${\rm Co}_{2}{\rm FeAl}_{0.5}{\rm Si}_{0.5}/n$-GaAs Schottky Tunnel Junctions

(2013) Tatsuya Saito et al.   IEEE TRANSACTIONS ON MAGNETICS

Three-Terminal Hanle Signals in Schottky Tunnel Junctions with Co2FeAl0.5Si0.5Full-Heusler Alloy Electrodes Deposited at Various Temperatures

(2013) Tatsuya Saito et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Electrical injection of spin-polarized electrons and electrical detection of dynamic nuclear polarization using a Heusler alloy spin source

(2013) Takafumi Akiho et al.   PHYSICAL REVIEW B

Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by half-metallicity of Co2MnSi and coherent tunneling

(2012) Hong-xi Liu et al.   APPLIED PHYSICS LETTERS

Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

(2011) Toshio Suzuki et al.   Applied Physics Express

Non-local detection of spin-polarized electrons at room temperature in Co50Fe50/GaAs Schottky tunnel junctions

(2011) Tetsuya Uemura et al.   APPLIED PHYSICS LETTERS

Electrical Transport Properties and Spin Injection in $\hbox{Co}_{2}\hbox{FeAl}_{0.5}\hbox{Si}_{0.5}/\hbox{GaAs}$ Junctions

(2011) Tatsuya Saito et al.   IEEE TRANSACTIONS ON MAGNETICS

Structural and Magnetic Properties of Co2FeAl0.5Si0.5 Full-Heusler Alloy Thin Films on GaAs Substrates

(2011) Tatsuya Saito et al.   MATERIALS TRANSACTIONS

Bias dependence of spin-polarized tunnel current through Fe/GaAs and Fe/GaAs/Fe junctions

(2010) S Honda et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Evidence of Fermi level control in a half-metallic Heusler compoundCo2MnSiby Al-doping: Comparison of measurements with first-principles calculations

(2010) Y. Sakuraba et al.   PHYSICAL REVIEW B

Temperature dependence of the nonlocal voltage in an Fe/GaAs electrical spin-injection device

(2010) G. Salis et al.   PHYSICAL REVIEW B

Improved tunnel magnetoresistance of magnetic tunnel junctions with Heusler Co2FeAl0.5Si0.5 electrodes fabricated by molecular beam epitaxy

(2009) N. Tezuka et al.   APPLIED PHYSICS LETTERS

Electrical creation of spin polarization in silicon at room temperature

(2009) Saroj P. Dash et al.   NATURE

Large tunnel magnetoresistance in magnetic tunnel junctions using a Co2MnSi Heusler alloy electrode and a MgO barrier

(2008) Sumito Tsunegi et al.   APPLIED PHYSICS LETTERS