Room-Temperature Electron Spin Transport in a Highly Doped Si Channel

标题
Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
作者
关键词
-
出版物
Applied Physics Express
Volume 4, Issue 2, Pages 023003
出版商
IOP Publishing
发表日期
2011-02-07
DOI
10.1143/apex.4.023003

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