期刊
MATERIALS TRANSACTIONS
卷 52, 期 3, 页码 370-373出版社
JAPAN INST METALS & MATERIALS
DOI: 10.2320/matertrans.MBW201004
关键词
full-Heusler alloy; gallium-arsenide; magnetic anisotropy
资金
- Asahi glass foundation [22360002]
- JST
We investigated the structural and magnetic properties of Co2FeAl0.5Si0.5 (CFAS) thin films on GaAs substrates. The CFAS thin films grew epitaxially on GaAs with CFAS (100)[100] parallel to GaAs (100)[100] relation and formed an ordered L2(1) structure with substrate heating deposition at T-SUB = 300 degrees C, 400 degrees C and post annealed at T-PA = 400 degrees C. Moreover, we confirmed the no reaction between CFAS and GaAs. The CFAS thin films on GaAs showed strong uniaxial magnetic anisotropy with an easy axis of [110](CFAS) ([110]GaAs) direction and the magnetic anisotropy generally increased by decreasing the thickness of CFAS. The magnetic moment of the CFAS film deposited with substrate heating at 300 degrees C was approximately 4.8 mu(B)/f.u. at room temperature. [doi:10.2320/matertrans.MBW201004]
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