Low power self-controllable voltage level and low swing logic based 11T SRAM cell for high speed CMOS circuits

标题
Low power self-controllable voltage level and low swing logic based 11T SRAM cell for high speed CMOS circuits
作者
关键词
Memory, Low power, SRAM, Voltage swing, Self-controllable
出版物
出版商
Springer Nature America, Inc
发表日期
2018-08-01
DOI
10.1007/s10470-018-1277-3

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