Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
出版年份 2018 全文链接
标题
Reduction of the forming voltage through tailored oxygen non-stoichiometry in tantalum oxide ReRAM devices
作者
关键词
-
出版物
Scientific Reports
Volume 8, Issue 1, Pages -
出版商
Springer Nature
发表日期
2018-07-12
DOI
10.1038/s41598-018-28992-9
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM
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