Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM
出版年份 2016 全文链接
标题
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 109, Issue 17, Pages 173503
出版商
AIP Publishing
发表日期
2016-10-25
DOI
10.1063/1.4965872
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Redox Reactions at Cu,Ag/Ta2O5Interfaces and the Effects of Ta2O5Film Density on the Forming Process in Atomic Switch Structures
- (2015) Tohru Tsuruoka et al. ADVANCED FUNCTIONAL MATERIALS
- Self-Limited Switching in Ta2O5/TaOxMemristors Exhibiting Uniform Multilevel Changes in Resistance
- (2015) Kyung Min Kim et al. ADVANCED FUNCTIONAL MATERIALS
- Thermal transport in tantalum oxide films for memristive applications
- (2015) Colin D. Landon et al. APPLIED PHYSICS LETTERS
- Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems
- (2015) Anja Wedig et al. Nature Nanotechnology
- Thickness-dependent electroforming behavior of ultra-thin Ta2O5resistance switching layer
- (2015) Tae Hyung Park et al. Physica Status Solidi-Rapid Research Letters
- Phase-Change and Redox-Based Resistive Switching Memories
- (2015) Dirk J. Wouters et al. PROCEEDINGS OF THE IEEE
- Forming-Free TaOxBased RRAM Device with Low Operating Voltage and High On/Off Characteristics
- (2015) Y. Jiang et al. ECS Journal of Solid State Science and Technology
- Towards forming-free resistive switching in oxygen engineered HfO2−x
- (2014) S. U. Sharath et al. APPLIED PHYSICS LETTERS
- Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories
- (2014) S. U. Sharath et al. APPLIED PHYSICS LETTERS
- Evaluating tantalum oxide stoichiometry and oxidation states for optimal memristor performance
- (2014) Michael T. Brumbach et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Oxygen vacancy effects on an amorphous-TaOx-based resistance switch: a first principles study
- (2014) Bo Xiao et al. Nanoscale
- Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure
- (2014) Siddheswar Maikap et al. Nanoscale Research Letters
- Optimizing TaOx memristor performance and consistency within the reactive sputtering “forbidden region”
- (2013) Andrew J. Lohn et al. APPLIED PHYSICS LETTERS
- In situ observation of filamentary conducting channels in an asymmetric Ta2O5−x/TaO2−x bilayer structure
- (2013) Gyeong-Su Park et al. Nature Communications
- Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO2±x
- (2012) Erwin Hildebrandt et al. JOURNAL OF APPLIED PHYSICS
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Growth of superconducting epitaxial LaNixBi2pnictide thin films with a Bi square net layer by reactive molecular beam epitaxy
- (2012) A Buckow et al. SUPERCONDUCTOR SCIENCE & TECHNOLOGY
- Highly Uniform Switching of Tantalum Embedded Amorphous Oxide Using Self-Compliance Bipolar Resistive Switching
- (2011) Chang Bum Lee et al. IEEE ELECTRON DEVICE LETTERS
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- High switching endurance in TaOx memristive devices
- (2010) J. Joshua Yang et al. APPLIED PHYSICS LETTERS
- Trapping-detrapping fluctuations in organic space-charge layers
- (2009) Anna Carbone et al. APPLIED PHYSICS LETTERS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchAdd your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload Now