Pseudohalide-Induced 2D (CH3 NH3 )2 PbI2 (SCN)2 Perovskite for Ternary Resistive Memory with High Performance

标题
Pseudohalide-Induced 2D (CH3 NH3 )2 PbI2 (SCN)2 Perovskite for Ternary Resistive Memory with High Performance
作者
关键词
-
出版物
Small
Volume 14, Issue 12, Pages 1703667
出版商
Wiley
发表日期
2018-02-23
DOI
10.1002/smll.201703667

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