Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High-Performance Small-Molecule-Based Ternary Memory Device with Low Threshold Voltage

标题
Tailoring of Molecular Planarity to Reduce Charge Injection Barrier for High-Performance Small-Molecule-Based Ternary Memory Device with Low Threshold Voltage
作者
关键词
-
出版物
ADVANCED MATERIALS
Volume 24, Issue 46, Pages 6210-6215
出版商
Wiley
发表日期
2012-09-13
DOI
10.1002/adma.201202319

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