Upgrading Electroresistive Memory from Binary to Ternary Through Single-Atom Substitution in the Molecular Design

标题
Upgrading Electroresistive Memory from Binary to Ternary Through Single-Atom Substitution in the Molecular Design
作者
关键词
-
出版物
Chemistry-An Asian Journal
Volume 12, Issue 1, Pages 45-51
出版商
Wiley
发表日期
2016-10-26
DOI
10.1002/asia.201601317

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