Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

标题
Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
作者
关键词
-
出版物
Nature Communications
Volume 6, Issue 1, Pages -
出版商
Springer Nature
发表日期
2015-11-13
DOI
10.1038/ncomms9948

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