期刊
IEEE PHOTONICS TECHNOLOGY LETTERS
卷 20, 期 13-16, 页码 1255-1257出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2008.926021
关键词
GaN; interlayer; low temperature (LT); photodetectors (PDs); p-i-n
GaN p-i-n ultraviolet (UV) photodetectors (PDs) with a low-temperature (LT)-AIN interlayer were proposed and fabricated. It was found that the dark current of such detectors is as small as 28pA even at a high reverse bias of 40 V. Although the high potential barrier at the AIN-GaN interface would slightly reduce the responsivity of PD under low reverse biases, the high UV-to-visible rejection ratio of the PD with an LT-AIN interlayer could be achieved under high reverse biases due to its very low dark current. The rejection ratio of the PD with the LT-AIN interlayer is as large as 735 at the reverse bias of 40 V.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据