Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC)

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

(2021) Francesco La Via et al.   Materials

3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations

(2021) Anastasios Arvanitopoulos et al.   IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology

(2021) Fan Li et al.   Materials

Impact of Stacking Faults and Domain Boundaries on the Electronic Transport in Cubic Silicon Carbide Probed by Conductive Atomic Force Microscopy

(2020) Filippo Giannazzo et al.   Advanced Electronic Materials

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

(2020) P. Fiorenza et al.   APPLIED SURFACE SCIENCE

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

(2019) M. Spera et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Growth of Large-Area, Stress-Free, and Bulk-Like 3C-SiC (100) Using 3C-SiC-on-Si in Vapor Phase Growth

(2019) Schuh et al.   Materials

Recent advances in 4H-SiC epitaxy for high-voltage power devices

(2018) Hidekazu Tsuchida et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

From thin film to bulk 3C-SiC growth: Understanding the mechanism of defects reduction

(2018) F. La Via et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices

(2018) Fabrizio Roccaforte et al.   MICROELECTRONIC ENGINEERING

Temperature dependent current-voltage characteristics of Au/ n -Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

(2018) Somnath Mahato et al.   PHYSICA B-CONDENSED MATTER

Review of Silicon Carbide Power Devices and Their Applications

(2017) Xu She et al.   IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy

(2017) Gabriel Ferro et al.   Scientific Reports

Single Domain 3C-SiC Growth on Off-Oriented 4H-SiC Substrates

(2015) Valdas Jokubavicius et al.   CRYSTAL GROWTH & DESIGN

Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates

(2014) Valdas Jokubavicius et al.   CRYSTAL GROWTH & DESIGN

Ideal Graphene/Silicon Schottky Junction Diodes

(2014) Dhiraj Sinha et al.   NANO LETTERS

Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

(2014) K. Alassaad et al.   ECS Journal of Solid State Science and Technology

In Situ Investigation of Current Transport Across Pt/n-Si (100) Schottky Junction During 100 $\hbox{MeV Ni}^{+7}$ Ion Irradiation

(2012) Shammi Verma et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts

(2011) Alessandra Alberti et al.   Applied Physics Express

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

(2011) Jens Eriksson et al.   Nanoscale Research Letters

Improved Ni/3C-SiC contacts by effective contact area and conductivity increases at the nanoscale

(2009) Jens Eriksson et al.   APPLIED PHYSICS LETTERS

Preferential oxidation of stacking faults in epitaxial off-axis (111) 3C-SiC films

(2009) A. Severino et al.   APPLIED PHYSICS LETTERS

Toward an ideal Schottky barrier on 3C-SiC

(2009) Jens Eriksson et al.   APPLIED PHYSICS LETTERS

Schottky Barrier Characteristics of Cobalt–Nickel Silicide/n-Si Junctions for Scaled-Si CMOS Applications

(2008) D. Panda et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fabrication of high performance 3C‐SiC vertical MOSFETs by reducing planar defects

(2008) Hiroyuki Nagasawa et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS