Electronic Structure of Oxygen Vacancies in the Orthorhombic Noncentrosymmetric Phase Hf0.5Zr0.5O2

Atomic and electronic structure of oxygen polyvacancies in ZrO 2

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Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

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Electronic properties of hafnium oxide: A contribution from defects and traps

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The atomic and electronic structure of oxygen polyvacancies in anatase

(2016) T. V. Perevalov et al.   TECHNICAL PHYSICS LETTERS

Charge transport in amorphous Hf0.5Zr0.5O2

(2015) D. R. Islamov et al.   APPLIED PHYSICS LETTERS

Charge transport mechanism in thin films of amorphous and ferroelectric Hf0.5Zr0.5O2

(2015) D. R. Islamov et al.   JETP LETTERS

High-K materials and metal gates for CMOS applications

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Initial stages of oxide formation on the Zr surface at low oxygen pressure: An in situ FIM and XPS study

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Evolutionary search for new high-kdielectric materials: methodology and applications to hafnia-based oxides

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Electronic structure of oxygen vacancies in hafnium oxide

(2013) T.V. Perevalov et al.   MICROELECTRONIC ENGINEERING

First principles study of oxygen vacancy states in monoclinic ZrO2: Interpretation of conduction characteristics

(2012) Ji-Hyun Hur et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Oxygen vacancy in Al2O3: Photoluminescence study and first-principle simulation

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