Solution-Processed Neodymium Oxide/ZnO Thin-Film Transistors with Electron Mobility in Excess of 65 cm V−1 s−1
出版年份 2017 全文链接
标题
Solution-Processed Neodymium Oxide/ZnO Thin-Film Transistors with Electron Mobility in Excess of 65 cm V−1
s−1
作者
关键词
-
出版物
Advanced Electronic Materials
Volume 3, Issue 4, Pages 1700025
出版商
Wiley
发表日期
2017-03-15
DOI
10.1002/aelm.201700025
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