Properties of Dopants in HfOx for Improving the Performance of Nonvolatile Memory

Hydrogen doping in HfO2 resistance change random access memory

(2016) D. Duncan et al.   APPLIED PHYSICS LETTERS

Filament-Induced Anisotropic Oxygen Vacancy Diffusion and Charge Trapping Effects in Hafnium Oxide RRAM

(2016) Dan Duncan et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Post-Oxide Deposition Annealing on Resistive Switching in HfO2-Based Oxide RRAM and Conductive-Bridge RAM Devices

(2015) Tsung-Ling Tsai et al.   IEEE ELECTRON DEVICE LETTERS

Effects of different dopants on switching behavior of HfO2-based resistive random access memory

(2014) Ning Deng et al.   Chinese Physics B

Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM

(2014)   IEEE ELECTRON DEVICE LETTERS

Write Scheme Allowing Reduced LRS Nonlinearity Requirement in a 3D-RRAM Array With Selector-Less 1TNR Architecture

(2014) Frederick T. Chen et al.   IEEE ELECTRON DEVICE LETTERS

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

(2014) Leqi Zhang et al.   IEEE ELECTRON DEVICE LETTERS

Grain boundary composition and conduction in HfO2: An ab initio study

(2013) K.-H. Xue et al.   APPLIED PHYSICS LETTERS

Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device

(2013) Y. S. Chen et al.   JOURNAL OF APPLIED PHYSICS

An associative capacitive network based on nanoscale complementary resistive switches for memory-intensive computing

(2013) Omid Kavehei et al.   Nanoscale

Resistive switching characteristics of nickel silicide layer embedded HfO2 film

(2012) Debashis Panda et al.   APPLIED PHYSICS LETTERS

Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

(2012) Ching-Shiang Peng et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

(2012) Zhongrui Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices

(2012) Seonghyun Kim et al.   NANOTECHNOLOGY

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device

(2012) Hongwei Xie et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation

(2011) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Towards the accurate electronic structure descriptions of typical high-constant dielectrics

(2011) Ting-Ting Jiang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

On the identification of the oxygen vacancy in HfO2

(2011) S.J. Clark et al.   MICROELECTRONIC ENGINEERING

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

(2011) Kyungah Seo et al.   NANOTECHNOLOGY

Quasiparticle Excitations and Charge Transition Levels of Oxygen Vacancies in Hafnia

(2011) Manish Jain et al.   PHYSICAL REVIEW LETTERS

Evidences of oxygen-mediated resistive-switching mechanism in TiN\HfO2\Pt cells

(2010) L. Goux et al.   APPLIED PHYSICS LETTERS

Electronic correlation effects in reduced rutileTiO2within theLDA+Umethod

(2010) Seong-Geon Park et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Energetics and electronic structure of aluminum point defects in HfO2: A first-principles study

(2009) Z. F. Hou et al.   JOURNAL OF APPLIED PHYSICS

Reliability degradation of thin HfO2/SiO2 gate stacks by remote RF hydrogen and deuterium plasma treatment

(2008) E. Efthymiou et al.   THIN SOLID FILMS