The impact of post-deposition annealing on the performance of solution-processed single layer In2O3 and isotype In2O3/ZnO heterojunction transistors

Low-temperature, nontoxic water-induced high-k zirconium oxide dielectrics for low-voltage, high-performance oxide thin-film transistors

(2016) Chundan Zhu et al.   Journal of Materials Chemistry C

Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies

(2015) John G. Labram et al.   Small

Fabrication of high-performance, low-temperature solution processed amorphous indium oxide thin-film transistors using a volatile nitrate precursor

(2015) Chang-Ho Choi et al.   Journal of Materials Chemistry C

High-Mobility Solution-Processed Tin Oxide Thin-Film Transistors with High-κ Alumina Dielectric Working in Enhancement Mode

(2014) Genmao Huang et al.   ACS Applied Materials & Interfaces

Indium Oxide Thin-Film Transistors Processed at Low Temperature via Ultrasonic Spray Pyrolysis

(2014) Hendrik Faber et al.   ACS Applied Materials & Interfaces

High electron mobility thin-film transistors based on Ga2O3 grown by atmospheric ultrasonic spray pyrolysis at low temperatures

(2014) Stuart R. Thomas et al.   APPLIED PHYSICS LETTERS

Inkjet-Printed In2O3 Thin-Film Transistor below 200 °C

(2013) Jun Seok Lee et al.   ACS Applied Materials & Interfaces

Solution-processable metal oxide semiconductors for thin-film transistor applications

(2013) Stuart R. Thomas et al.   CHEMICAL SOCIETY REVIEWS

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

(2013) Yun Seog Lee et al.   Energy & Environmental Science

Microscopic Origin of Electron Accumulation inIn2O3

(2013) K. H. L. Zhang et al.   PHYSICAL REVIEW LETTERS

An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates

(2013) Young Hwan Hwang et al.   NPG Asia Materials

Solution-Processed Flexible Fluorine-doped Indium Zinc Oxide Thin-Film Transistors Fabricated on Plastic Film at Low Temperature

(2013) Jin-Suk Seo et al.   Scientific Reports

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

Electrodeposition of In2O3thin films from a dimethylsulfoxide based electrolytic solution

(2012) R. Henríquez et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors

(2011) Seung-Yeol Han et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

High-mobility low-temperature ZnO transistors with low-voltage operation

(2010) Hyojin Bong et al.   APPLIED PHYSICS LETTERS

Indium Oxide Thin-Film Transistors Fabricated by RF Sputtering at Room Temperature

(2010) Joo Hyon Noh et al.   IEEE ELECTRON DEVICE LETTERS

Electronic structure ofIn2O3and Sn-dopedIn2O3by hard x-ray photoemission spectroscopy

(2010) C. Körber et al.   PHYSICAL REVIEW B

Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

Band gap, electronic structure, and surface electron accumulation of cubic and rhombohedralIn2O3

(2009) P. D. C. King et al.   PHYSICAL REVIEW B

High Performance Solution-Processed Indium Oxide Thin-Film Transistors

(2008) Hyun Sung Kim et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Nature of the Band Gap ofIn2O3Revealed by First-Principles Calculations and X-Ray Spectroscopy

(2008) Aron Walsh et al.   PHYSICAL REVIEW LETTERS

Surface Electron Accumulation and the Charge Neutrality Level inIn2O3

(2008) P. D. C. King et al.   PHYSICAL REVIEW LETTERS