Electric-field-induced widely tunable direct and indirect band gaps in hBN/MoS2 van der Waals heterostructures

Band structure modulation in MoS 2 multilayers and heterostructures through electric field and strain

(2016) Nicholas A. Lanzillo et al.   COMPUTATIONAL MATERIALS SCIENCE

Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2

(2016) Gioele Mirabelli et al.   JOURNAL OF APPLIED PHYSICS

Conversion of Dinitrogen to Ammonia by FeN3-Embedded Graphene

(2016) Xiao-Fei Li et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Multipurpose Black-Phosphorus/hBN Heterostructures

(2016) Gabriel C. Constantinescu et al.   NANO LETTERS

Insights into enhanced visible-light photocatalytic activity of C60 modified g-C3N4 hybrids: the role of nitrogen

(2016) Quan Li et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

2D materials and van der Waals heterostructures

(2016) K. S. Novoselov et al.   SCIENCE

Graphene/h-BN Heterostructures: Recent Advances in Controllable Preparation and Functional Applications

(2016) Xiuju Song et al.   Advanced Energy Materials

Van der Waals heterostructures and devices

(2016) Yuan Liu et al.   Nature Reviews Materials

Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride

(2015) Nicholas Petrone et al.   ACS Nano

Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors

(2015) Ahmet Avsar et al.   ACS Nano

Highly Stable, Dual-Gated MoS2 Transistors Encapsulated by Hexagonal Boron Nitride with Gate-Controllable Contact, Resistance, and Threshold Voltage

(2015) Gwan-Hyoung Lee et al.   ACS Nano

All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures

(2015) Shanshan Wang et al.   ACS Nano

Ultrasensitive and Broadband MoS2Photodetector Driven by Ferroelectrics

(2015) Xudong Wang et al.   ADVANCED MATERIALS

Large Spin-Valley Polarization in Monolayer MoTe2on Top of EuO(111)

(2015) Qingyun Zhang et al.   ADVANCED MATERIALS

Insights into Enhanced Visible-Light Photocatalytic Hydrogen Evolution of g-C3N4 and Highly Reduced Graphene Oxide Composite: The Role of Oxygen

(2015) Liang Xu et al.   CHEMISTRY OF MATERIALS

Electric-Field Tunable Band Offsets in Black Phosphorus and MoS2 van der Waals p-n Heterostructure

(2015) Le Huang et al.   Journal of Physical Chemistry Letters

In Situ Thermal Decomposition of Exfoliated Two-Dimensional Black Phosphorus

(2015) Xiaolong Liu et al.   Journal of Physical Chemistry Letters

Band-gap engineering of the h-BN/MoS2/h-BN sandwich heterostructure under an external electric field

(2015) Zongyu Huang et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles

(2015) Aiming Yan et al.   NANO LETTERS

Highly Sensitive, Encapsulated MoS2 Photodetector with Gate Controllable Gain and Speed

(2015) Dominik Kufer et al.   NANO LETTERS

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform

(2015) Xu Cui et al.   Nature Nanotechnology

Toward air-stable multilayer phosphorene thin-films and transistors

(2015) Joon-Seok Kim et al.   Scientific Reports

Environmental instability of few-layer black phosphorus

(2015) Joshua O Island et al.   2D Materials

Computational study on electrical properties of transition metal dichalcogenide field-effect transistors with strained channel

(2014)   JOURNAL OF APPLIED PHYSICS

Indirect-direct band gap transition through electric tuning in bilayer MoS2

(2014) Z. Y. Zhang et al.   JOURNAL OF CHEMICAL PHYSICS

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

(2014) A. V. Kretinin et al.   NANO LETTERS

Role of the Seeding Promoter in MoS2 Growth by Chemical Vapor Deposition

(2014) Xi Ling et al.   NANO LETTERS

High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems

(2013) Hsiao-Yu Chang et al.   ACS Nano

Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

(2013) Gwan-Hyoung Lee et al.   ACS Nano

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Intrinsic Electronic Transport Properties of High-Quality Monolayer and Bilayer MoS2

(2013) Britton W. H. Baugher et al.   NANO LETTERS

MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field

(2013) Ning Lu et al.   Nanoscale

Mobility engineering and a metal–insulator transition in monolayer MoS2

(2013) Branimir Radisavljevic et al.   NATURE MATERIALS

Ultrasensitive photodetectors based on monolayer MoS2

(2013) Oriol Lopez-Sanchez et al.   Nature Nanotechnology

Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS2systems

(2013) Y. C. Cheng et al.   PHYSICAL REVIEW B

One-Dimensional Electrical Contact to a Two-Dimensional Material

(2013) L. Wang et al.   SCIENCE

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

(2012) Qihang Liu et al.   Journal of Physical Chemistry C

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

High Performance Multilayer MoS2 Transistors with Scandium Contacts

(2012) Saptarshi Das et al.   NANO LETTERS

Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes

(2012) Peng Lu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Local Electronic Properties of Graphene on a BN Substrate via Scanning Tunneling Microscopy

(2011) Régis Decker et al.   NANO LETTERS

Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

(2011) Alexander S. Mayorov et al.   NANO LETTERS

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

Scanning tunnelling microscopy and spectroscopy of ultra-flat graphene on hexagonal boron nitride

(2011) Jiamin Xue et al.   NATURE MATERIALS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors

(2011) Z. Y. Zhu et al.   PHYSICAL REVIEW B

Phonons in single-layer and few-layer MoS2and WS2

(2011) A. Molina-Sánchez et al.   PHYSICAL REVIEW B

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Anomalous Lattice Vibrations of Single- and Few-Layer MoS2

(2010) Changgu Lee et al.   ACS Nano

Improved Description of the Structure of Molecular and Layered Crystals: Ab Initio DFT Calculations with van der Waals Corrections

(2010) Tomáš Bučko et al.   JOURNAL OF PHYSICAL CHEMISTRY A

Boron nitride substrates for high-quality graphene electronics

(2010) C. R. Dean et al.   Nature Nanotechnology

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Large-Scale Fabrication of Boron Nitride Nanosheets and Their Utilization in Polymeric Composites with Improved Thermal and Mechanical Properties

(2009) Chunyi Zhi et al.   ADVANCED MATERIALS