标题
Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2
作者
关键词
-
出版物
Scientific Reports
Volume 7, Issue 1, Pages -
出版商
Springer Nature
发表日期
2017-01-13
DOI
10.1038/srep40559
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Antennal transcriptome analysis of the Asian longhorned beetle Anoplophora glabripennis
- (2016) Ping Hu et al. Scientific Reports
- Graphite edge controlled registration of monolayer MoS2 crystal orientation
- (2015) Chun-I Lu et al. APPLIED PHYSICS LETTERS
- Emergence of coherence in the charge-density wave state of 2H-NbSe2
- (2015) U. Chatterjee et al. Nature Communications
- Bandgap tunability at single-layer molybdenum disulphide grain boundaries
- (2015) Yu Li Huang et al. Nature Communications
- Shape Evolution of Monolayer MoS2 Crystals Grown by Chemical Vapor Deposition
- (2014) Shanshan Wang et al. CHEMISTRY OF MATERIALS
- An updated version of wannier90: A tool for obtaining maximally-localised Wannier functions
- (2014) Arash A. Mostofi et al. COMPUTER PHYSICS COMMUNICATIONS
- Transport Properties of Monolayer MoS2 Grown by Chemical Vapor Deposition
- (2014) Hennrik Schmidt et al. NANO LETTERS
- Direct Imaging of Band Profile in Single Layer MoS2 on Graphite: Quasiparticle Energy Gap, Metallic Edge States, and Edge Band Bending
- (2014) Chendong Zhang et al. NANO LETTERS
- Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- (2014) Miguel M. Ugeda et al. NATURE MATERIALS
- Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2
- (2014) Yung-Chang Lin et al. Nature Nanotechnology
- Observation of monolayer valence band spin-orbit effect and induced quantum well states in MoX2
- (2014) Nasser Alidoust et al. Nature Communications
- Thickness dependence of spin polarization and electronic structure of ultra-thin films of MoS2 and related transition-metal dichalcogenides
- (2014) Tay-Rong Chang et al. Scientific Reports
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- (2013) Hiram J. Conley et al. NANO LETTERS
- Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
- (2013) Wu Zhou et al. NANO LETTERS
- Local Strain Engineering in Atomically Thin MoS2
- (2013) Andres Castellanos-Gomez et al. NANO LETTERS
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
- (2013) Arend M. van der Zande et al. NATURE MATERIALS
- Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
- (2013) Sina Najmaei et al. NATURE MATERIALS
- Tight-binding model and direct-gap/indirect-gap transition in single-layer and multilayer MoS2
- (2013) E. Cappelluti et al. PHYSICAL REVIEW B
- Direct Measurement of the Thickness-Dependent Electronic Band Structure ofMoS2Using Angle-Resolved Photoemission Spectroscopy
- (2013) Wencan Jin et al. PHYSICAL REVIEW LETTERS
- Functionalization of monolayer MoS2 by substitutional doping: A first-principles study
- (2013) Qu Yue et al. PHYSICS LETTERS A
- Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition
- (2012) Yi-Hsien Lee et al. ADVANCED MATERIALS
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Evidence of strong correlations at the van Hove singularity in the scanning tunneling spectra of superconducting Bi2Sr2CaCu2O8+δsingle crystals
- (2012) Jouko Nieminen et al. PHYSICAL REVIEW B
- Evolution of the charge density wave state in CuxTiSe2
- (2012) M. Iavarone et al. PHYSICAL REVIEW B
- Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles
- (2012) Hannu-Pekka Komsa et al. PHYSICAL REVIEW B
- Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)
- (2012) Won Seok Yun et al. PHYSICAL REVIEW B
- Electronic properties of graphene: a perspective from scanning tunneling microscopy and magnetotransport
- (2012) Eva Y Andrei et al. REPORTS ON PROGRESS IN PHYSICS
- Integrated Circuits and Logic Operations Based on Single-Layer MoS2
- (2011) Branimir Radisavljevic et al. ACS Nano
- Single-Layer MoS2 Phototransistors
- (2011) Zongyou Yin et al. ACS Nano
- Photoluminescence from Chemically Exfoliated MoS2
- (2011) Goki Eda et al. NANO LETTERS
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Optical model-solution to the competition between a pseudogap phase and a charge-transfer-gap phase in high-temperature cuprate superconductors
- (2010) Tanmoy Das et al. PHYSICAL REVIEW B
- Tight-binding theory of the spin-orbit coupling in graphene
- (2010) Sergej Konschuh et al. PHYSICAL REVIEW B
- Chiral Charge-Density Waves
- (2010) J. Ishioka et al. PHYSICAL REVIEW LETTERS
- Atomically ThinMoS2: A New Direct-Gap Semiconductor
- (2010) Kin Fai Mak et al. PHYSICAL REVIEW LETTERS
- Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene
- (2009) Xu Du et al. NATURE
- Spontaneous exciton condensation in1T-TiSe2: BCS-like approach
- (2009) C. Monney et al. PHYSICAL REVIEW B
- Origin of the Electron-Hole Asymmetry in the Scanning Tunneling Spectrum of the High-TemperatureBi2Sr2CaCu2O8+δSuperconductor
- (2009) Jouko Nieminen et al. PHYSICAL REVIEW LETTERS
- Scanning Tunneling Spectroscopy of Graphene on Graphite
- (2009) Guohong Li et al. PHYSICAL REVIEW LETTERS
- From Mott state to superconductivity in 1T-TaS2
- (2008) B. Sipos et al. NATURE MATERIALS
- Ultrahigh electron mobility in suspended graphene
- (2008) K.I. Bolotin et al. SOLID STATE COMMUNICATIONS
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationFind the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
Search