Article
Chemistry, Multidisciplinary
Yongbo Wu, Linfeng Lan, Penghui He, Yilong Lin, Caihao Deng, Siting Chen, Junbiao Peng
Summary: The study systematically investigated solution-processed AlOx dielectrics, revealing that the capacitance of AlOx is critically dependent on frequency when annealed at low temperatures and subjected to water treatment. These findings highlight the impact of mobile ions on the frequency-dependent capacitance of solution-processed AlOx dielectrics.
APPLIED SCIENCES-BASEL
(2021)
Article
Engineering, Electrical & Electronic
Umu Hanifah, Juan Paolo S. Bermundo, Hidenori Kawanishi, Magdaleno R. Vasquez, Mark D. Ilasin, Yukiharu Uraoka
Summary: This study demonstrates that argon plasma treatment is an effective method for achieving fully solution-processed amorphous indium zinc oxide (a-IZO) TFTs with high stability and performance. The treatment activates the electrode and induces TFT switching, leading to improved electrical performance and stability. The results show the potential of plasma treatment for future low-temperature flexible device applications.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Vishwas Acharya, Nila Pal, Utkarsh Pandey, Akhilesh Kumar Yadav, Mukesh Suthar, Pradip Kumar Roy, Sajal Biring, Bhola N. Pal
Summary: This study demonstrates the deposition of SrTiO3 thin film using a simple solution processed technique and its application in the fabrication of sol-gel derived SnO2 TFT. The high dielectric constant of the SrTiO3 thin film allows the TFT to operate in both low voltage and high voltage ranges. Experimental results show hysteresis-free characteristics in the low voltage range (<2 V), but some hysteresis effects appear in the higher voltage range (>5 V).
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Materials Science, Multidisciplinary
S. Arulkumar, S. Parthiban, J. Y. Kwon, Y. Uraoka, J. P. S. Bermundo, Arka Mukherjee, Bikas C. Das
Summary: In this study, amorphous silicon indium oxide thin films were deposited using a sputtering process at room temperature for thin-film transistor (TFT) active channel applications. The study confirmed the amorphous nature and surface roughness of the deposited films and investigated the effect of different oxygen partial pressures on film properties. The results showed that the annealed films exhibited good performance and stability.
Article
Chemistry, Physical
Hyeonju Lee, Xue Zhang, Bokyung Kim, Jin-Hyuk Bae, Jaehoon Park
Summary: In this study, the effects of iodine doping on the electrical properties of copper oxide (CuO) semiconductor films and TFT performance were investigated. Iodine doping showed improvements in Hall mobility, carrier concentration, and resistivity of solution-processed CuO semiconductors. Additionally, iodine doping enhanced the performance of CuO TFTs by inducing conduction channel formation by holes and reducing counterclockwise hysteresis in transfer characteristics.
Article
Engineering, Electrical & Electronic
Soochang You, Anvar Tukhtaev, Gergely Tarsoly, Han Lin Zhao, Xiao Lin Wang, Fei Shan, Jae-Yun Lee, Jin Hee Lee, Sung Il Jang, Yong Jin Jeong, Sung-Jin Kim
Summary: Solution processable metal oxide semiconductors offer opportunities for large area fabrication of transparent logic circuits. In this paper, we present our results on the fabrication of TFTs with IZO semiconductor film and optimize the device fabrication process by studying the effect of stacking multiple layers. The practical applicability of the TFTs is demonstrated by fabricating a load-type inverter circuit and measuring its electrical response.
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
Zhipeng Gong, Zunxian Yang, Zihong Shen, Yinglin Qiu, Lei Xu, Bingqing Ye, Yuliang Ye, Wenbo Wu, Yuanqing Zhou, Qiaocan Huang, Zeqian Hong, Zongyi Meng, Zhiwei Zeng, Zhiming Cheng, Songwei Ye, Hongyi Hong, Qianting Lan, Fushan Li, Tailiang Guo, Shaohao Wang, Sheng Xu
Summary: Due to their unique properties, transparent metal oxide semiconductors have become the most attractive alternatives to silicon-based semiconductors. This study developed a bilayer transistor composed of ZnO nanoparticles/SnO2, which showed excellent performance and environmental stability. Compared with indium-based metal oxide transistors, the bilayer ZnO nanoparticles/SnO2 transistor has lower cost and great potential for low-cost thin-film electronic devices.
Article
Physics, Applied
Chunlai Luo, Ting Huang, Changhao Li, Yan Zhang, Zhengmiao Zou, Yushan Li, Ruiqiang Tao, Jinwei Gao, Guofu Zhou, Xubing Lu, Jun-Ming Liu
Summary: Solution deposition of high-quality zirconium oxide dielectric films using an oxygen-doped precursor solution has been demonstrated to significantly enhance the electrical properties of solution-processed indium oxide thin film transistors. The high dielectric constant dielectric film deposited with ODS serves as an effective way to improve the performance of MO-TFTs for future low-cost, high-performance applications.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Biochemistry & Molecular Biology
Christophe Avis, Jin Jang
Summary: This study investigates the origin of hysteresis in solution-processed polycrystalline SnO2 TFTs. By varying the curing temperature and conducting stress tests, it was found that holes trapped in the dielectric are the main source of hysteresis, leading to the fabrication of inverters and ring oscillators with minimal hysteresis.
Article
Chemistry, Multidisciplinary
Mengwei Si, Yaoqiao Hu, Zehao Lin, Xing Sun, Adam Charnas, Dongqi Zheng, Xiao Lyu, Haiyan Wang, Kyeongjae Cho, Peide D. Ye
Summary: This work demonstrates enhancement-mode field-effect transistors using an atomically-deposited amorphous In2O3 channel with thickness as low as 0.7 nm. The controllable thickness of In2O3 at an atomic scale allows for the design of sufficient 2D carrier density in the channel, affecting threshold voltage and channel carrier density. The model of trap neutral level (TNL) explains how the Fermi level aligns in the conduction band of In2O3 due to the quantum confinement effect, as confirmed by density function theory (DFT) calculations.
Article
Chemistry, Multidisciplinary
Jun-Hyeong Park, Won Park, Jeong-Hyeon Na, Jinuk Lee, Jun-Su Eun, Junhao Feng, Do-Kyung Kim, Jin-Hyuk Bae
Summary: This study demonstrates high-performance thin-film transistors (TFTs) using atomically thin indium-oxide (InOx) semiconductors fabricated through a solution process. By controlling the solution molarity, the bandgap and thickness of the InOx were tuned to achieve superior field-effect mobility and switching characteristics in TFTs. The optimized InOx TFTs showed high field-effect mobility, high on/off-current ratio, and superior positive and negative gate bias stress stabilities, making them promising for next-generation electronic applications.
Article
Nanoscience & Nanotechnology
Dongil Ho, Sunwoo Choi, Hyunwoo Kang, Byungkyu Park, Minh Nhut Le, Sung Kyu Park, Myung-Gil Kim, Choongik Kim, Antonio Facchetti
Summary: Solution-processed metal-oxide thin-film transistors (TFTs) with different metal compositions were investigated for radiation hardness against ionizing radiation exposure. The amorphous zinc-indium-tin oxide (Zn-In-Sn-O or ZITO) was found to be an optimal radiation-resistant channel layer of TFTs due to its structural plasticity, defect tolerance, and high electron mobility. In situ irradiation experiments revealed three degradation mechanisms, including increase in channel conductivity, charge buildup in the interface and dielectric, and trap-assisted tunneling in the dielectric. By employing a radiation-resistant ZITO channel, a thin SiO2 dielectric, and a passivation layer, oxide-based TFTs demonstrated excellent stability under real-time gamma-ray irradiation.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Engineering, Electrical & Electronic
Zifan Wang, Yepeng Shi, Zihan Zhang, Yao Dong, Guoxia Liu, Fukai Shan
Summary: This study fabricates thin film transistors based on metal oxide using a solution process to regulate the channel. The concentration of oxygen vacancies in the front and back channel can be controlled by adsorbing oxygen ions using hafnium, resulting in improved field effect mobility and device stability. Additionally, a transparent TFT with a field effect mobility of 20.64 cm(2)/Vs is demonstrated using a ZrO2 dielectric.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Nanoscience & Nanotechnology
Min Seong Kim, Hyung Tae Kim, Hyukjoon Yoo, Dong Hyun Choi, Jeong Woo Park, Tae Sang Kim, Jun Hyung Lim, Hyun Jae Kim
Summary: This study suggests that introducing an oxygen scavenger layer (OSL) in a-IGZO TFT can significantly improve its electrical characteristics and stability, especially at low temperatures. The enhancement is mainly attributed to the presence of hafnium (Hf) in the OSL, which absorbs oxygen ions to address interface issues between the front channel and OSL.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Physical
Christophe Avis, Jin Jang
Summary: The impact of NF3 plasma treatment on the HfO2 gate insulator of a-SnOx TFTs was studied. The 10 s-treated TFT demonstrated the best stability, with significantly decreased density of states (DOS) and good HfO2/a-SnOx interface quality.
Article
Chemistry, Physical
Jean Pierre Ndabakuranye, Jungho Ryu, Jaesung Kim, Nhat Thi Hong Le, Jaehoon Park, Jungwon Kim
JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY
(2019)
Article
Instruments & Instrumentation
Jean Pierre Ndabakuranye, Hyeonju Lee, Idrissa Kayijuka, Sungkeun Baang, Jaehoon Park
SENSORS AND MATERIALS
(2020)
Article
Engineering, Biomedical
Jean Pierre Ndabakuranye, Anushi E. Rajapaksa, Genia Burchall, Shiqiang Li, Steven Prawer, Arman Ahnood
Summary: This study investigates the feasibility of measuring bilirubin concentration in whole porcine blood samples using dual-wavelength transmission measurement. A compact and low-cost measurement setup is developed and optimized for point-of-care monitoring of blood bilirubin outside of medical facilities.
IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING
(2022)
Article
Engineering, Biomedical
Jean Pierre Ndabakuranye, Steven Prawer, Arman Ahnood
Summary: Hyperbilirubinemia in infants and cirrhosis in adults are major global diseases, especially in areas with limited healthcare resources. Existing techniques for measuring bilirubin suffer from complexity and size limitations. This study presents a miniature system-on-chip platform for bilirubin measurement, achieving accurate results and laying the foundation for point-of-care monitoring of hyperbilirubinemia and cirrhosis.
BIOMEDICAL SIGNAL PROCESSING AND CONTROL
(2023)
Article
Materials Science, Biomaterials
Arman Ahnood, Ross Cheriton, Anne Bruneau, James A. Belcourt, Jean Pierre Ndabakuranye, William Lemaire, Rob Hilkes, Rejean Fontaine, John P. D. Cook, Karin Hinzer, Steven Prawer
ADVANCED BIOSYSTEMS
(2020)
Article
Engineering, Multidisciplinary
Arman Ahnood, Jean Pierre Ndabakuranye, Shiqiang Li, Omid Kavehei, Steven Prawer
ENGINEERING RESEARCH EXPRESS
(2020)