Article
Chemistry, Multidisciplinary
Chaojian Hou, Kun Wang, Wenqi Zhang, Donglei Chen, Xiaokai Wang, Lu Fan, Chunyang Li, Jing Zhao, Lixin Dong
Summary: The current state-of-the-art in situ transmission electron microscopy (TEM) characterization technology can manipulate specimens at the nanoscale and provide atom-level material attributes. However, there is a barrier between material attributes investigations and device-level application explorations due to immature in situ TEM manufacturing technology and sufficient external stimuli. This study proposes an in situ opto-electromechanical TEM characterization platform by integrating an ultra-flexible micro-cantilever chip with optical, mechanical, and electrical coupling fields. The platform enables static and dynamic in situ device-level TEM characterizations using molybdenum disulfide (MoS2) as the channel material. The experiments demonstrate electron-beam modulation behavior and bending of MoS2 nanodevices, revealing piezoresistive and opto-electromechanical coupling properties. Real-time atom-level characterization is achieved using this approach, providing a step towards advanced in situ device-level TEM characterization technology.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Ju-Ah Lee, Jongwon Yoon, Seungkwon Hwang, Hyunsang Hwang, Jung-Dae Kwon, Seung-Ki Lee, Yonghun Kim
Summary: Two-dimensional transition-metal dichalcogenides (TMDs) materials, such as molybdenum disulfide (MoS2), have outstanding electrical properties and atomically thin layered structure, making them a potential main material for future high-performance logic circuits. However, local back-gate-based MoS2 transistors on a silicon substrate can degrade electrical characteristics. The use of buried-gate-based MoS2 transistors, where the gate electrodes are embedded into the silicon substrate, significantly enhances various device parameters and allows for the fabrication of integrated logic circuits.
Article
Chemistry, Analytical
Estefania Enebral-Romero, Laura Gutierrez-Galvez, Rafael Del Cano, Manuel Vazquez Sulleiro, Alicia Naranjo, Jennifer Gomez, Felix Pariente, Emilio M. Perez, Tania Garcia-Mendiola, Encarnacion Lorenzo
Summary: In this study, a new methodology for selective and sensitive pathogen detection is proposed using a 2D layered heterostructured biosensing platform. The platform is based on the immobilization of functionalized molybdenum disulphide onto graphene screen-printed electrodes. Electrochemical impedance spectroscopy is used to detect and quantify SARS-CoV-2 spike RBD recombinant protein with a low detection limit. The biosensor shows selectivity even in the presence of interfering proteins and can detect SARS-CoV-2 S1 protein in nasopharyngeal swab samples.
SENSORS AND ACTUATORS B-CHEMICAL
(2023)
Article
Chemistry, Physical
Dexing Tang, Minjiang Dan, Yan Zhang
Summary: This study theoretically investigates the piezotronic effect on the thermoelectric properties of MoS2 zigzag nanoribbons, showing a significant increase in thermoelectric efficiency and Seebeck coefficient. This research not only explores the impact of piezotronic effect on thermoelectric properties, but also suggests a new approach for designing high-performance thermoelectric devices.
Review
Materials Science, Multidisciplinary
Xuehui Xu, Yingxu Shang, Fengsong Liu, Qiao Jiang, Baoquan Ding
Summary: Nucleic acid logic devices are highly flexible and responsive, able to perform logic operations in complex biological environments. They can respond to various stimuli, such as DNA/RNA strands, metal ions, and small molecules.
Review
Chemistry, Multidisciplinary
Yifei Wang, Qijun Sun, Jinran Yu, Nuo Xu, Yichen Wei, Jeong Ho Cho, Zhong Lin Wang
Summary: This article presents a systematic summary of Boolean logic computing based on emerging neuromorphic transistors, including logical operation modes, materials, device structures, and working mechanisms. The input mode of Boolean logic operation is classified into electrical input, optical input, and synergistic optical/electrical input. Additionally, modulation strategies using electrical, optical, and thermal signals to construct programmable logic functions are also summarized. These investigations hold great significance in advancing the development of high-efficiency and high integration density in future neuromorphic computing.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Moojune Song, Min Gyu Park, San Ko, Sung Kyu Jang, Minkyu Je, Kab-Jin Kim
Summary: Skyrmion-based logic devices take advantage of skyrmion annihilation to increase logic operation efficiency, demonstrating successful implementation of a half adder, full adder, and n-bit ripple-carry adder. The prototype 32-bit adder consumes energy as low as 0.62 pJ per operation, only 18% of the previously proposed skyrmion adder, making it a promising candidate for beyond-CMOS logic devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Xingxia Sun, Chenguang Zhu, Jiali Yi, Li Xiang, Chao Ma, Huawei Liu, Biyuan Zheng, Yong Liu, Wenxia You, Wujun Zhang, Delang Liang, Qin Shuai, Xiaoli Zhu, Huigao Duan, Lei Liao, Yuan Liu, Dong Li, Anlian Pan
Summary: This article introduces a van der Waals heterostructure with a partial floating-gate field-effect transistor device architecture that can function as both a reconfigurable transistor and a reconfigurable non-volatile memory, and can provide reconfigurable logic-in-memory capabilities.
NATURE ELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Xiaohan Wu, Yuqian Gu, Ruijing Ge, Martha Serna, Yifu Huang, Jack C. Lee, Deji Akinwande
Summary: This study investigates the use of electron irradiation to improve the reliability of monolayer molybdenum disulfide memory devices. The research confirms the effect of irradiation on the devices and proposes a clustering failure mechanism for the improved reliability.
NPJ 2D MATERIALS AND APPLICATIONS
(2022)
Article
Multidisciplinary Sciences
Alexander Khitun, Michael Balinskiy
Summary: In this paper, a logic device is described that performs computations by finding paths connecting input and output ports. The device consists of electric and magnetic parts, and operates at room temperature. The number of possible paths increases factorial with the size of the mesh. Different phase shifts in the magnetic part are achieved by adjusting the magnitude and direction of the bias magnetic field.
SCIENTIFIC REPORTS
(2022)
Review
Materials Science, Multidisciplinary
Liang-Rui Zou, Dan-Dan Sang, Yu Yao, Xue-Ting Wang, Yuan-Yuan Zheng, Nai-Zhou Wang, Cong Wang, Qing-Lin Wang
Summary: This review focuses on the latest progress of optoelectronic device applications based on two-dimensional nano-MoS2. The unique properties of this material make it a promising candidate for various optoelectronic applications.
Article
Multidisciplinary Sciences
Wanying Du, Xionghui Jia, Zhixuan Cheng, Wanjing Xu, Yanping Li, Lun Dai
Summary: This study demonstrates a practical approach to fabricate CMOS inverter arrays using large-area p-MoTe2 and n-MoS2 grown via chemical vapor deposition method. By balancing the current characteristics of channel materials, complete logic swing and clear dynamic switching behavior are achieved in the inverters. The research results show that the goal of achieving ultra-low power consumption has been realized.
Article
Energy & Fuels
Rahul Sharma, Nihal, Mamta Sharma, J. K. Goswamy
Summary: In this work, WO3 nanopowder was synthesized, and MoS2/WO3 nanocomposite was prepared. The addition of MoS2 in WO3 led to the formation of layered nanostructures and change in morphology. The electrochemical properties of the nanocomposites improved due to the large active surface area. The nanocomposites also exhibited good optical properties at low MoS2 contents.
INTERNATIONAL JOURNAL OF ENERGY RESEARCH
(2022)
Article
Chemistry, Physical
Shang Gao, Yaqing Zhang, Zhimin Yang, Teng Fei, Sen Liu, Tong Zhang
Summary: Carbon nanomaterials are considered promising sensing materials for high-performance electrochemical sensors. The structure of carbon supports was found to significantly impact the sensing performances of MoS2 modified carbon nanomaterials, with MoS2 modified rGO hybrids demonstrating the highest sensitivity among the tested materials. This study provides insights for the design of high-performance electrochemical sensors based on carbon nanomaterials.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Chemistry, Multidisciplinary
Stefano Ippolito, Francesca Urban, Wenhao Zheng, Onofrio Mazzarisi, Cataldo Valentini, Adam G. Kelly, Sai Manoj Gali, Mischa Bonn, David Beljonne, Federico Corberi, Jonathan N. Coleman, Hai I. Wang, Paolo Samori
Summary: In this article, the charge-transport mechanisms of printed devices based on covalent MoS2 networks are studied, comparing the effects of aromatic versus aliphatic dithiolated linkers. The results show that aliphatic systems lead to 3D variable range hopping, while aromatic linkers exhibit nearest neighbor hopping. The improved performance of devices functionalized with pi-conjugated molecules is attributed to enhanced interflake electronic connectivity and additional percolation paths.
ADVANCED MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Vivek Mootheri, Goutham Arutchelvan, Sreetama Banerjee, Surajit Sutar, Alessandra Leonhardt, Marie-Emmanuelle Boulon, Cedric Huyghebaert, Michel Houssa, Inge Asselberghs, Iuliana Radu, Marc Heyns, Dennis Lin
Summary: This study presents a novel approach of transferring metal-graphene hybrid contacts onto chemical vapor deposition (CVD) MoS2 for 2D FET fabrication, achieving lithography free contacting strategy. The results show that Ru-Gr contact exhibits the lowest contact resistance among the three metal-graphene contact stacks reported, and it also performs the best among CVD grown graphene contacted MoS2 devices. The technique of metal-graphene contact stack transfer represents a technologically relevant approach that can be scaled up for larger wafer areas.
Article
Nanoscience & Nanotechnology
Vivek Mootheri, Alessandra Leonhardt, Devin Verreck, Inge Asselberghs, Cedric Huyghebaert, Stefan de Gendt, Iuliana Radu, Dennis Lin, Marc Heyns
Summary: 2D materials such as MoS2 show promise for further scaling of CMOS technology, but achieving ambipolar transport in MoS2 FETs is challenging due to Fermi level pinning (FLP). This study successfully increases hole transport in MoS2 FETs by adjusting contact and substrate interfaces, demonstrating the material's ambipolar nature. The results highlight the importance of dielectric environment and processing conditions on ambipolar transport in MoS2 FETs.
Article
Physics, Applied
Gianluca Gubbiotti, Alexandr Sadovnikov, Evgeny Beginin, Sergey Nikitov, Danny Wan, Anshul Gupta, Shreya Kundu, Giacomo Talmelli, Robert Carpenter, Inge Asselberghs, Iuliana P. Radu, Christoph Adelmann, Florin Ciubotaru
Summary: This research investigates the characteristics of spin waves in vertical meander-shaped Co40Fe40B20 thin films using Brillouin-light-scattering spectroscopy. The study reveals the presence of frequency band gaps at specific wave numbers, which can be controlled by changing the geometrical parameters of the film.
PHYSICAL REVIEW APPLIED
(2021)
Article
Physics, Applied
Giacomo Talmelli, Daniele Narducci, Frederic Vanderveken, Marc Heyns, Fernanda Irrera, Inge Asselberghs, Iuliana P. Radu, Christoph Adelmann, Florin Ciubotaru
Summary: Spin wave modes in magnetic waveguides with width down to 320nm were studied using electrical propagating spin-wave spectroscopy and micromagnetic simulations under both longitudinal and transverse magnetic bias fields. The results showed a 1.3GHz wide spin-wave band for longitudinal bias fields, while transverse bias fields led to several distinct bands corresponding to different quantized width modes. Micromagnetic simulations revealed nonuniform and tilted magnetization in this geometry, resulting in spin wave dispersion relations in good agreement with experimental observations.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
G. Gubbiotti, A. Sadovnikov, E. Beginin, S. Sheshukova, S. Nikitov, G. Talmelli, I. Asselberghs, I. P. Radu, C. Adelmann, F. Ciubotaru
Summary: In this study, the spin-wave propagation in three-dimensional nanoscale CoFeB/Ta/NiFe meander structures was investigated, revealing the magnonic band structure with a set of stationary modes interposed by dispersive modes. The influence of dipolar coupling between the ferromagnetic layers on the magnonic band structure was compared with single-layer CoFeB meander structures with the same geometry parameters.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
N. Dumoulin Stuyck, F. A. Mohiyaddin, R. Li, M. Heyns, B. Govoreanu, I. P. Radu
Summary: Using micromagnets for electron spin manipulation in silicon qubits is popular, but may introduce stray magnetic field gradients affecting qubits. By optimizing magnet design, dephasing effects can be minimized to improve qubit coherence times.
APPLIED PHYSICS LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Jakob Michl, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, Ben Kaczer, Dimitri Linten, Bertrand Parvais, Bogdan Govoreanu, Iuliana Radu, Tibor Grasser, Michael Waltl
Summary: Through experimental results and a quantum mechanical model, we found that at low temperatures, the BTI of pMOSFETs is mainly affected by the SiO2 layer, while the BTI of nMOSFETs is mainly affected by the HfO2 layer, and defects in the HfO2 layer do not freeze out at low temperatures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Jakob Michl, Alexander Grill, Dominic Waldhoer, Wolfgang Goes, Ben Kaczer, Dimitri Linten, Bertrand Parvais, Bogdan Govoreanu, Iuliana Radu, Michael Waltl, Tibor Grasser
Summary: The study discusses the effectiveness of using the WKB approximation method to simulate charge trapping behavior at low temperatures. It was found that this approximation method can provide excellent results and can be used to model charge trapping behavior at low temperatures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
K-H Kao, C. Godfrin, A. Elsayed, R. Li, E. Simoen, A. Grill, S. Kubicek, I. P. Radu, B. Govoreanu
Summary: This study investigates the quality of four different gate stacks for cryogenic MOS devices by analyzing the oxide trap density, transconductance, Hall mobility, and critical density. The results provide valuable insights into the material physics at cryogenic temperatures.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Tom Schram, Surajit Sutar, Iuliana Radu, Inge Asselberghs
Summary: This article introduces the applications of large-area 2D-material-based devices in sensor or photonics devices and the back end of line (BEOL), and discusses the requirements, development status, and gaps to be bridged for the full wafer integration of aggressively scaled 2D-based logic circuits.
ADVANCED MATERIALS
(2022)
