Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
出版年份 2023 全文链接
标题
Multi-level resistive switching in hafnium-oxide-based devices for neuromorphic computing
作者
关键词
-
出版物
Nano Convergence
Volume 10, Issue 1, Pages -
出版商
Springer Science and Business Media LLC
发表日期
2023-09-15
DOI
10.1186/s40580-023-00392-4
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- CMOS compatible low power consumption ferroelectric synapse for neuromorphic computing
- (2023) Zhenhai Li et al. IEEE ELECTRON DEVICE LETTERS
- Electrochemical Memristor‐Based Artificial Neurons and Synapses – fundamentals, applications, and challenges
- (2023) Shaochuan Chen et al. ADVANCED MATERIALS
- Thousands of conductance levels in memristors integrated on CMOS
- (2023) Mingyi Rao et al. NATURE
- Lessons from hafnium dioxide-based ferroelectrics
- (2023) Beatriz Noheda et al. NATURE MATERIALS
- Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity
- (2023) Markus Hellenbrand et al. Science Advances
- The gap between academia and industry in resistive switching research
- (2023) Mario Lanza et al. Nature Electronics
- A stable rhombohedral phase in ferroelectric Hf(Zr) 1+ x O 2 capacitor with ultralow coercive field
- (2023) Yuan Wang et al. SCIENCE
- Reliable multilevel memristive neuromorphic devices based on amorphous matrix via quasi-1D filament confinement and buffer layer
- (2022) Sang Hyun Choi et al. Science Advances
- Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems
- (2022) Minsu Park et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Impact of titanium doping and pulsing conditions on the analog temporal response of hafnium oxide based memristor synapses
- (2022) Fabia F. Athena et al. JOURNAL OF APPLIED PHYSICS
- Bending Resistant Multibit Memristor for Flexible Precision Inference Engine Application
- (2022) Parthasarathi Pal et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Review on the Microstructure of Ferroelectric Hafnium Oxides
- (2022) Maximilian Lederer et al. Physica Status Solidi-Rapid Research Letters
- Filamentary TaO x /HfO 2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing
- (2022) Tommaso Stecconi et al. Advanced Electronic Materials
- Vertical Metal‐Oxide Electrochemical Memory for High‐Density Synaptic Array Based High‐Performance Neuromorphic Computing
- (2022) Hyunjoon Lee et al. Advanced Electronic Materials
- Forming‐Free, Self‐Compliance, Bipolar Multi‐Level Resistive Switching in WO 3–x Based MIM Device
- (2022) Krishna Rudrapal et al. Advanced Electronic Materials
- From Ferroelectric Material Optimization to Neuromorphic Devices
- (2022) Thomas Mikolajick et al. ADVANCED MATERIALS
- Schottky-to-Ohmic switching in ferroelectric memristors based on semiconducting Hf0.93Y0.07O2 thin films
- (2022) Moritz L. Müller et al. APPLIED PHYSICS LETTERS
- Multilevel resistive switching and synaptic behaviors in MnO-based memristor
- (2022) Ruibo Ai et al. CURRENT APPLIED PHYSICS
- Low Conductance State Drift Characterization and Mitigation in Resistive Switching Memories (RRAM) for Artificial Neural Networks
- (2022) Andrea Baroni et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Ferroelectric Hafnium Oxide Films for In‐Memory Computing Applications
- (2022) Zhenhai Li et al. Advanced Electronic Materials
- Synaptic and resistive switching behaviors in NiO/Cu2O heterojunction memristor for bioinspired neuromorphic computing
- (2022) Li Zhang et al. APPLIED SURFACE SCIENCE
- Resistive and synaptic properties modulation by electroforming polarity in CMOS-compatible Cu/HfO2/Si device
- (2021) Jinwoong Yang et al. CHAOS SOLITONS & FRACTALS
- Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles
- (2021) Sera Kwon et al. Scientific Reports
- Deep Insight into Steep‐Slope Threshold Switching with Record Selectivity (>4 × 10 10 ) Controlled by Metal‐Ion Movement through Vacancy‐Induced‐Percolation Path: Quantum‐Level Control of Hybrid‐Filament
- (2021) Writam Banerjee et al. ADVANCED FUNCTIONAL MATERIALS
- A FORMing-Free HfO2-/HfON-Based Resistive-Gate Metal–Oxide–Semiconductor Field-Effect-Transistor (RG-MOSFET) Nonvolatile Memory With 3-Bit-Per-Cell Storage Capability
- (2021) E. R. Hsieh et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Interface Engineering for Enhancement of Analog Properties of W/WO3-x/HfO2/Pd Resistance Switched Structures
- (2021) Aleksandra A. Koroleva et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Ferroelectric field-effect transistors based on HfO2: a review
- (2021) Halid Mulaosmanovic et al. NANOTECHNOLOGY
- Performance Assessment of Amorphous HfO2-Based RRAM Devices for Neuromorphic Applications
- (2021) O. G. Ossorio et al. ECS Journal of Solid State Science and Technology
- Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing
- (2021) Muhammad Ismail et al. CERAMICS INTERNATIONAL
- Enhanced Linearity in CBRAM Synapse by Post Oxide Deposition Annealing for Neuromorphic Computing Applications
- (2021) Chun-Ling Hsu et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Forming-free Pt/Al2O3/HfO2/HfAlOx/TiN memristor with controllable multilevel resistive switching and neuromorphic characteristics for artificial synapse
- (2021) Muhammad Ismail et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor crossbar array for bioinspired neuromorphic computing
- (2021) Muhammad Ismail et al. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
- Linearity improvement of HfOx-based memristor with multilayer structure
- (2021) Yutong Jiang et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Ferroelectric gate oxides for negative capacitance transistors
- (2021) Michael Hoffmann et al. MRS BULLETIN
- Reliable analog resistive switching behaviors achieved using memristive devices in AlO x /HfO x bilayer structure for neuromorphic systems
- (2021) Meng Qi et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Resistive switching and synaptic behaviors of an HfO2/Al2O3 stack on ITO for neuromorphic systems
- (2020) Chandreswar Mahata et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Fully hardware-implemented memristor convolutional neural network
- (2020) Peng Yao et al. NATURE
- Analog-type resistive switching behavior of Au/HfO2/ZnO memristor fabricated on flexible Mica substrate
- (2020) Zhen-Xun Tang et al. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
- Algorithm for Training Neural Networks on Resistive Device Arrays
- (2020) Tayfun Gokmen et al. Frontiers in Neuroscience
- Resistive switching materials for information processing
- (2020) Zhongrui Wang et al. Nature Reviews Materials
- ReRAM: History, Status, and Future
- (2020) Yangyin Chen IEEE TRANSACTIONS ON ELECTRON DEVICES
- Enhancing the synaptic properties of low-power and forming-free HfOx/TaOy/HfOx resistive switching devices
- (2020) Dionisis Sakellaropoulos et al. MICROELECTRONIC ENGINEERING
- Resistive switching in atomic layer deposited HfO2/ZrO2 nanolayer stacks
- (2020) Lin Tang et al. APPLIED SURFACE SCIENCE
- Scale-free ferroelectricity induced by flat phonon bands in HfO2
- (2020) Hyun-Jae Lee et al. SCIENCE
- Modified resistive switching performance by increasing Al concentration in HfO2 on transparent indium tin oxide electrode
- (2020) Chandreswar Mahata et al. CERAMICS INTERNATIONAL
- Picosecond multilevel resistive switching in tantalum oxide thin films
- (2020) Ulrich Böttger et al. Scientific Reports
- Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching
- (2020) Stefan Petzold et al. Advanced Electronic Materials
- Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application
- (2020) Ji-Ho Ryu et al. JOURNAL OF ALLOYS AND COMPOUNDS
- In-memory Learning with Analog Resistive Switching Memory: A Review and Perspective
- (2020) Yue Xi et al. PROCEEDINGS OF THE IEEE
- Emerging Materials for Neuromorphic Devices and Systems
- (2020) Min-Kyu Kim et al. iScience
- Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device
- (2020) Tukaram D. Dongale et al. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
- Emerging Memory Devices for Neuromorphic Computing
- (2019) Navnidhi K. Upadhyay et al. Advanced Materials Technologies
- Memristive crossbar arrays for brain-inspired computing
- (2019) Qiangfei Xia et al. NATURE MATERIALS
- Oxygen Vacancy Kinetics Mechanism of the Negative Forming-Free Process and Multilevel Resistance Based on Hafnium Oxide RRAM
- (2019) Mingqun Qi et al. Journal of Nanomaterials
- Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits
- (2019) Jae-Hyeun Park et al. ACS Applied Materials & Interfaces
- Fully “Erase-free” Multi-Bit Operation in HfO2-Based Resistive Switching Device
- (2019) Jin Joo Ryu et al. ACS Applied Materials & Interfaces
- Coexistence of Digital and Analog Resistive Switching With Low Operation Voltage in Oxygen-Gradient HfOx Memristors
- (2019) Zhaonan Li et al. IEEE ELECTRON DEVICE LETTERS
- Advances in Resistive Switching based Memory Devices
- (2019) Sandeep Munjal et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Controlling the intermediate conductance states in RRAM devices for synaptic applications
- (2019) H. García et al. MICROELECTRONIC ENGINEERING
- Analog‐Type Resistive Switching Devices for Neuromorphic Computing
- (2019) Wenbin Zhang et al. Physica Status Solidi-Rapid Research Letters
- Analysis of resistive switching processes in TiN/Ti/HfO2/W devices to mimic electronic synapses in neuromorphic circuits
- (2019) G. González-Cordero et al. SOLID-STATE ELECTRONICS
- Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface
- (2019) Boncheol Ku et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Dynamics of set and reset processes on resistive switching memories
- (2019) S. Dueñas et al. MICROELECTRONIC ENGINEERING
- Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior
- (2019) F. Cüppers et al. APL Materials
- Multilevel HfO2-based RRAM devices for low-power neuromorphic networks
- (2019) V. Milo et al. APL Materials
- Improvement of Endurance in HZO-Based Ferroelectric Capacitor Using Ru Electrode
- (2019) Rongrong Cao et al. IEEE ELECTRON DEVICE LETTERS
- Towards spike-based machine intelligence with neuromorphic computing
- (2019) Kaushik Roy et al. NATURE
- Bipolar resistive switching, synaptic plasticity and non-volatile memory effects in the solution-processed zinc oxide thin film
- (2019) V.L. Patil et al. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
- Resistive switching and synaptic learning performance of a TiO2 thin film based device prepared by sol–gel and spin coating techniques
- (2019) Lifang Hu et al. NANOTECHNOLOGY
- Ferroelectric Tunneling Junctions Based on Aluminum Oxide/ Zirconium-Doped Hafnium Oxide for Neuromorphic Computing
- (2019) Hojoon Ryu et al. Scientific Reports
- Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device
- (2019) Yanfei Qi et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Filament Growth and Resistive Switching in Hafnium Oxide Memristive Devices
- (2018) Sven Dirkmann et al. ACS Applied Materials & Interfaces
- An Artificial Neuron Based on a Threshold Switching Memristor
- (2018) Xumeng Zhang et al. IEEE ELECTRON DEVICE LETTERS
- Self-Rectifying and Forming-Free Resistive-Switching Device for Embedded Memory Application
- (2018) Qing Luo et al. IEEE ELECTRON DEVICE LETTERS
- The resistive switching characteristics of Ni-doped HfO x film and its application as a synapse
- (2018) Tingting Tan et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors
- (2018) Thomas Mikolajick et al. MRS BULLETIN
- The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2
- (2018) Youngin Goh et al. NANOTECHNOLOGY
- Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits
- (2018) F. Merrikh Bayat et al. Nature Communications
- Efficient and self-adaptive in-situ learning in multilayer memristor neural networks
- (2018) Can Li et al. Nature Communications
- Evidence of soft bound behaviour in analogue memristive devices for neuromorphic computing
- (2018) Jacopo Frascaroli et al. Scientific Reports
- Reliable Multivalued Conductance States in TaOx Memristors through Oxygen Plasma-Assisted Electrode Deposition with in Situ-Biased Conductance State Transmission Electron Microscopy Analysis
- (2018) Myoung-Jae Lee et al. ACS Applied Materials & Interfaces
- Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
- (2018) Elia Ambrosi et al. FARADAY DISCUSSIONS
- Analysis and control of the intermediate memory states of RRAM devices by means of admittance parameters
- (2018) H. Castán et al. JOURNAL OF APPLIED PHYSICS
- An electronic synaptic device based on HfO2TiOx bilayer structure memristor with self-compliance and deep-RESET characteristics
- (2018) Jian Liu et al. NANOTECHNOLOGY
- Engineering synaptic characteristics of TaOx/HfO2 bi-layered resistive switching device
- (2018) Sohyeon Kim et al. NANOTECHNOLOGY
- Optimized Method for Low-Energy and Highly Reliable Multibit Operation in a HfO2 -Based Resistive Switching Device
- (2018) Jin Joo Ryu et al. Advanced Electronic Materials
- Recommended Methods to Study Resistive Switching Devices
- (2018) Mario Lanza et al. Advanced Electronic Materials
- Challenges in materials and devices for resistive-switching-based neuromorphic computing
- (2018) Javier del Valle et al. JOURNAL OF APPLIED PHYSICS
- Device and materials requirements for neuromorphic computing
- (2018) Raisul Islam et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- A rhombohedral ferroelectric phase in epitaxially strained Hf0.5Zr0.5O2 thin films
- (2018) Yingfen Wei et al. NATURE MATERIALS
- Reservoir computing using dynamic memristors for temporal information processing
- (2017) Chao Du et al. Nature Communications
- Face classification using electronic synapses
- (2017) Peng Yao et al. Nature Communications
- Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition
- (2017) Masoud Akbari et al. RSC Advances
- Resistive switching memories based on metal oxides: mechanisms, reliability and scaling
- (2016) Daniele Ielmini SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching
- (2016) Seungho Cho et al. Nature Communications
- Strain Tuning and Strong Enhancement of Ionic Conductivity in SrZrO3-RE2O3(RE = Sm, Eu, Gd, Dy, and Er) Nanocomposite Films
- (2015) Shinbuhm Lee et al. ADVANCED FUNCTIONAL MATERIALS
- Energy-Efficient Abundant-Data Computing: The N3XT 1,000x
- (2015) Mohamed M. Sabry Aly et al. COMPUTER
- Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches
- (2011) Stephan Menzel et al. ADVANCED FUNCTIONAL MATERIALS
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Extended Frenkel pairs and band alignment at metal-oxide interfaces
- (2009) O. Sharia et al. PHYSICAL REVIEW B
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