Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?

出版年份 2014 全文链接

标题

作者

关键词

出版物

Volume 61, Issue 10, Pages 3456-3464

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2014-09-19

DOI

10.1109/ted.2014.2350483

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