Key role of initial interface on contact characteristics of Pd/p-GaN

Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts

(2023) Fan Zhang et al.   JOURNAL OF APPLIED PHYSICS

High responsivity self-powered DUV photodetectors based on β-Ga2O3/GaN heterogeneous PN junctions

(2023) Rongrong Chen et al.   Vacuum

Evolution of Water Layer Adsorption on the GaN(0001) Surface and Its Influence on Electronic Properties

(2021) Shi-Qi Li et al.   Journal of Physical Chemistry C

Comparison of growth interruption and temperature variation impact on emission efficiency in blue InGaN/GaN MQWs

(2020) J. Mickevičius et al.   VACUUM

High-power hybrid GaN-based green laser diodes with ITO cladding layer

(2019) Lei Hu et al.   Photonics Research

Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

(2017) J. Kunc et al.   Physical Review Applied

Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance

(2016) Christopher M. Smyth et al.   Journal of Physical Chemistry C

Formation of GaPd2 and GaPd intermetallic compounds on GaN(0001)

(2015) M. Grodzicki et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Photoinduced Water Oxidation at the Aqueous GaN (101̅0) Interface: Deprotonation Kinetics of the First Proton-Coupled Electron-Transfer Step

(2015) Mehmed Z. Ertem et al.   ACS Catalysis

On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

(2014) Feng Gao et al.   JOURNAL OF APPLIED PHYSICS

Structures and Mechanisms of Water Adsorption on ZnO(0001) and GaN(0001) Surface

(2013) Honggang Ye et al.   Journal of Physical Chemistry C

The Role of the Oxygen/Water Redox Couple in Suppressing Electron Conduction in Field-Effect Transistors

(2009) Carla M. Aguirre et al.   ADVANCED MATERIALS

In situ ultrahigh vacuum residual gas analyzer “calibration”

(2008) O. B. Malyshev et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A