On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

出版年份 2014 全文链接

标题

On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

作者

关键词

-

出版物

JOURNAL OF APPLIED PHYSICS

Volume 115, Issue 12, Pages 124506

出版商

AIP Publishing

发表日期

2014-03-28

DOI

10.1063/1.4869738

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