Significant effect of thin oxide layer on characteristics of p-InGaN/GaN nonalloyed ohmic contacts

Distinguishing various influences on the electrical properties of thin-barrier AlGaN/GaN heterojunctions with in-situ SiN caps

(2021) Jiaqi He et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Hydroxyl Group Adsorption on GaN (0001) Surface: First Principles and XPS Studies

(2019) Hengshan Wang et al.   JOURNAL OF ELECTRONIC MATERIALS

XPS studies on the role of arsenic incorporated into GaN

(2019) M. Grodzicki et al.   VACUUM

Angular dependent XPS study of surface band bending on Ga-polar n -GaN

(2018) Rong Huang et al.   APPLIED SURFACE SCIENCE

Studies of early stages of Mn/GaN(0001) interface formation using surface-sensitive techniques

(2018) M. Grodzicki et al.   VACUUM

Theoretical analysis of modulation doping effects on intersubband transition properties of semipolar AlGaN/GaN quantum well

(2017) Houqiang Fu et al.   JOURNAL OF APPLIED PHYSICS

The fundamental surface science of wurtzite gallium nitride

(2017) V.M. Bermudez   SURFACE SCIENCE REPORTS

Ohmic contacts to Gallium Nitride materials

(2016) Giuseppe Greco et al.   APPLIED SURFACE SCIENCE

Characterization of MBE-grown InAlN/GaN heterostructure valence band offsets with varying In composition

(2016) Kristen Collar et al.   AIP Advances

Investigation of Surface Band Bending of Ga-Face GaN by Angle-Resolved X-ray Photoelectron Spectroscopy

(2016) T. L. Duan et al.   ECS Journal of Solid State Science and Technology

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

(2016) Edward A. Jones et al.   IEEE Journal of Emerging and Selected Topics in Power Electronics

Flexible Self-Powered GaN Ultraviolet Photoswitch with Piezo-Phototronic Effect Enhanced On/Off Ratio

(2015) Mingzeng Peng et al.   ACS Nano

High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts

(2015) Wael Jatal et al.   IEEE ELECTRON DEVICE LETTERS

Mechanisms of Ohmic Contact Formation and Carrier Transport of Low Temperature Annealed Hf/Al/Ta on In0.18Al0.82N/GaN-on-Si

(2014) Y. Liu et al.   ECS Journal of Solid State Science and Technology

Low resistance GaN/InGaN/GaN tunnel junctions

(2013) Sriram Krishnamoorthy et al.   APPLIED PHYSICS LETTERS

Electro-structural evolution and Schottky barrier height in annealed Au/Ni contacts onto p-GaN

(2011) G. Greco et al.   JOURNAL OF APPLIED PHYSICS

Stable structure and effects of oxygen on InN (101¯0) and (112¯0) surfaces

(2011) Jianli Wang et al.   JOURNAL OF CRYSTAL GROWTH

Schottky Barrier Characteristics and Carrier Transport Mechanism for Ohmic Contacts to Strained p-Type InGaN/GaN Superlattice

(2010) Sun-Ho Jang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

(2009) R. Dormaier et al.   JOURNAL OF APPLIED PHYSICS

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE