Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride
出版年份 2023 全文链接
标题
Adsorption mechanism of dimeric Ga precursors in metalorganic chemical vapor deposition of gallium nitride
作者
关键词
-
出版物
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Volume 41, Issue 6, Pages -
出版商
American Vacuum Society
发表日期
2023-10-31
DOI
10.1116/6.0002966
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Recent Advances in Theoretical Development of Thermal Atomic Layer Deposition: A Review
- (2022) Mina Shahmohammadi et al. Nanomaterials
- Synthesis, Structure and Thermal Properties of Volatile Indium and Gallium Triazenides**
- (2022) Rouzbeh Samii et al. EUROPEAN JOURNAL OF INORGANIC CHEMISTRY
- Carbon and silicon background impurity control in undoped GaN layers grown with trimethylgallium and triethylgallium via metalorganic chemical vapor deposition
- (2022) Marzieh Bakhtiary-Noodeh et al. JOURNAL OF CRYSTAL GROWTH
- Multiscale Modeling in Chemical Vapor Deposition Processes: Models and Methodologies
- (2020) N. Cheimarios et al. ARCHIVES OF COMPUTATIONAL METHODS IN ENGINEERING
- Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition
- (2020) Seok Choi et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Methylamines as Nitrogen Precursors in Chemical Vapor Deposition of Gallium Nitride
- (2019) Karl Rönnby et al. Journal of Physical Chemistry C
- Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices
- (2019) Mohd Zahid Ansari et al. ACS Applied Materials & Interfaces
- Quantum chemical study on gas-phase oligomerization in AlGaN MOCVD growth
- (2019) Liu Tang et al. Computational and Theoretical Chemistry
- Numerical simulation and analysis of process parameters of GaN-MOCVD reactor
- (2018) Jian Li et al. INTERNATIONAL COMMUNICATIONS IN HEAT AND MASS TRANSFER
- Thermal isomerization of azobenzenes: on the performance of Eyring transition state theory
- (2017) Clemens Rietze et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- A survey of Gallium Nitride HEMT for RF and high power applications
- (2017) A.S. Augustine Fletcher et al. SUPERLATTICES AND MICROSTRUCTURES
- Quantum Chemistry Study on the Adduct Reaction Paths as Functions of Temperature in GaN/AlN MOVPE Growth
- (2016) Ran Zuo et al. ECS Journal of Solid State Science and Technology
- Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression
- (2015) Xiao-Guang He et al. Chinese Physics B
- Reaction Pathways of GaN (0001) Growth from Trimethylgallium and Ammonia versus Triethylgallium and Hydrazine Using First Principle Calculations
- (2015) Qi An et al. Journal of Physical Chemistry C
- Studying chemical vapor deposition processes with theoretical chemistry
- (2014) Henrik Pedersen et al. THEORETICAL CHEMISTRY ACCOUNTS
- DFT study on adduct reaction paths of GaN MOCVD growth
- (2013) JunCao Shi et al. Science China-Technological Sciences
- Gallium nitride devices for power electronic applications
- (2013) B Jayant Baliga SEMICONDUCTOR SCIENCE AND TECHNOLOGY
- Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications
- (2012) Ian M. Watson COORDINATION CHEMISTRY REVIEWS
- Effect of the damping function in dispersion corrected density functional theory
- (2011) Stefan Grimme et al. JOURNAL OF COMPUTATIONAL CHEMISTRY
Discover Peeref hubs
Discuss science. Find collaborators. Network.
Join a conversationPublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More