期刊
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
卷 47, 期 -, 页码 16-19出版社
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2016.02.008
关键词
Ga2O3; Gallium oxide; Epitaxy; HVPE
类别
资金
- Russian Science Foundation [14-29-00086]
- Russian Science Foundation [14-29-00086] Funding Source: Russian Science Foundation
We report on Ga2O3 deposition on c-plane sapphire substrates by hydride vapour phase epitaxy using metallic gallium, hydrogen chloride and dry air as precursors. High deposition rate up to 250 mu m/h has been realized. As confirmed by X-ray diffraction and micro-Raman measurements, produced films consisted of pure monoclinic beta-Ga2O3 phase and were ((2) over bar 01) oriented. The full width at half maximum (FWHM) for ((2) over bar 01) rocking curve was decreasing with increasing GaCl flow. The narrowest FWHM of 20 arcmin has been detected. (C) 2016 Elsevier Ltd. All rights reserved.
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