Impact of annealing treatment on structural and dc electrical properties of spin coated tungsten trioxide thin films for Si/WO3/Ag junction diode

出版年份 2016 全文链接

标题

作者

关键词

Annealing temperature, P-n junction diodes, Tungsten trioxide, J-V-T characterization, Gaussian distribution

出版物

Volume 56, Issue -, Pages 145-154

出版商

Elsevier BV

发表日期

2016-08-26

DOI

10.1016/j.mssp.2016.08.007

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