Investigation on Impact of Doped HfO$_{2}$ Thin Film Ferro-Dielectrics on FDSOI NCFET Under Back-Gate Bias Influence

标题
Investigation on Impact of Doped HfO$_{2}$ Thin Film Ferro-Dielectrics on FDSOI NCFET Under Back-Gate Bias Influence
作者
关键词
-
出版物
IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume 22, Issue -, Pages 14-19
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2022-12-24
DOI
10.1109/tnano.2022.3231693

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